Cross-point memory array and related fabrication techniques

ABSTRACT

Methods and apparatuses for a cross-point memory array and related fabrication techniques are described. The fabrication techniques described herein may facilitate concurrently building two or more decks of memory cells disposed in a cross-point architecture. Each deck of memory cells may include a plurality of first access lines (e.g., word lines), a plurality of second access lines (e.g., bit lines), and a memory component at each topological intersection of a first access line and a second access line. The fabrication technique may use a pattern of vias formed at a top layer of a composite stack, which may facilitate building a 3D memory array within the composite stack while using a reduced number of processing steps. The fabrication techniques may also be suitable for forming a socket region where the 3D memory array may be coupled with other components of a memory device.

BACKGROUND

The following relates generally to forming a memory array and morespecifically to a cross-point memory array and related fabricationtechniques.

Memory devices are widely used to store information in variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Information is stored byprogramming different states of a memory device. For example, binarydevices have two states, often denoted by a logic “1” or a logic “0.” Inother systems, more than two states may be stored. To access the storedinformation, a component of the electronic device may read, or sense,the stored state in the memory device. To store information, a componentof the electronic device may write, or program, the state in the memorydevice.

Various types of memory devices exist, including magnetic hard disks,random access memory (RAM), read only memory (ROM), dynamic RAM (DRAM),synchronous dynamic RAM (SDRAM), ferroelectric RAM (FeRAM), magnetic RAM(MRAM), resistive RAM (RRAM), flash memory, phase change memory (PCM),and others. Memory devices may include volatile memory cells ornon-volatile memory cells. Non-volatile memory cells may maintain theirstored logic state for extended periods of time even in the absence ofan external power source. Volatile memory cells may lose their storedstate over time unless they are periodically refreshed by an externalpower source.

Improving memory devices, generally, may include increasing memory celldensity, increasing read/write speeds, increasing reliability,increasing data retention, reducing power consumption, or reducingmanufacturing costs, among other metrics. Building more memory cells perunit area may be desired to increase memory cell density and reduceper-bit costs without increasing a size of a memory device. Improvedtechniques for fabricating memory devices (e.g., faster, lower-cost),including memory devices with increased memory cell density, may also bedesired.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary diagram of a memory device including athree-dimensional array of memory cells that supports a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure.

FIG. 2 illustrates an example of a three-dimensional memory array thatsupports a cross-point memory array and related fabrication techniquesin accordance with embodiments of the present disclosure.

FIGS. 3A-3C illustrate exemplary fabrication techniques that support across-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure.

FIGS. 4A-4B illustrate exemplary via patterns and structures thatsupport a cross-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure.

FIGS. 5-7 illustrate example methods of forming three-dimensionalcross-point memory array structures that support a cross-point memoryarray and related fabrication techniques in accordance with embodimentsof the present disclosure.

FIG. 8 illustrates exemplary via patterns and structures that support across-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure.

FIGS. 9-12 illustrate examples of 3D cross-point memory array structuresthat support a cross-point memory array and related fabricationtechniques in accordance with embodiments of the present disclosure.

FIG. 13 illustrates an exemplary layout of a socket region that supportsa cross-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure.

FIG. 14 illustrates example methods of making connections in a socketregion that supports a cross-point memory array and related fabricationtechniques in accordance with embodiments of the present disclosure.

FIGS. 15 through 20 illustrate methods that support a cross-point memoryarray and related fabrication techniques in accordance with embodimentsof the present disclosure.

DETAILED DESCRIPTION

Building more memory cells per unit area may increase an areal densityof memory cells within a memory device. The increased areal density ofmemory cells may facilitate a lower per-bit-cost of the memory deviceand/or a greater memory capacity at a fixed cost. Three-dimensional (3D)integration of two or more two-dimensional (2D) arrays of memory cellsmay increase areal density while also alleviating difficulties that maybe associated with shrinking various feature sizes of memory cells. Insome cases, a 2D array of memory cells may be referred to as a deck ofmemory cells, and 3D integration of multiple decks of memory cells mayinclude repeating processing steps associated with building a singledeck of memory cells. For example, at least some of the steps used tobuild one deck of memory cells may be repeated multiple times, as eachsuccessive deck of memory cells is built on top of any previously-builtdeck(s) of memory cells. Such repetition of processing steps may resultin increased fabrication costs—e.g., due to a relatively large number ofphotomasking or other processing steps—and thus may offset benefits thatmay otherwise be associated with 3D integration.

The techniques, methods, and related devices described herein may relateto facilitating concurrent building of two or more decks of memorycells, along with associated structures (e.g., electrodes), using apattern of vias (e.g., access vias) formed at a top layer of a compositestack, which may facilitate building a 3D memory device within thecomposite stack while using a reduced number of processing steps (e.g.,photomasking steps). For example, the techniques, methods, and relateddevices described herein may provide for the formation of variousstructures (e.g., electrodes, memory cells, dielectric buffers, etc.) ina lower layer, which may be referred to as a buried layer, byselectively removing and replacing material originally included at theburied layer based on the pattern of vias. Further, the techniques,methods, and related devices described herein may facilitate theconcurrent formation of like structures at a plurality of the buriedlayers, thereby reducing the number of photomasking or other processingsteps associated with fabricating a 3D memory device, which may reducefabrication costs of the 3D memory device and yield other benefits thatmay be appreciated by one of ordinary skill in the art. As used herein,a via may refer to an opening or an opening that has been later filledwith a material, including a material that may not be conductive.

The techniques, methods, and related devices described herein may besuitable for building multiple decks of memory cells disposed in across-point architecture. For example, each deck of memory cells in across-point architecture may include a plurality of first access lines(e.g., word lines) in a first plane and a plurality of second accesslines (e.g., bit lines) in a second plane, the first access lines andthe second access lines extending in different directions—e.g., firstaccess lines may be substantially perpendicular to second access lines.Each topological cross-point of a first access line and a second accesslines may correspond to a memory cell. Hence, a deck of memory cells ina cross-point architecture may include a memory array having a pluralityof memory cells placed at topological cross-points of access lines(e.g., a 3D grid structure of access lines).

Various memory technologies may include various forms of memorycomponents that may be suitable for a cross-point architecture (e.g., aresistive component in a phase change memory (PCM) technology or aconductive-bridge random access memory (CBRAM) technology, or acapacitive component in a ferroelectric random access memory (FeRAM)technology). In some cases, a memory cell in a cross-point architecturemay include a selection component (e.g., a thin-film switch device) anda memory component. In other cases, a memory cell in a cross-pointarchitecture may not require a separate selection component—e.g., thememory cell may be a self-selecting memory cell.

The techniques, methods, and related devices described herein may relateto constructing a set of first access lines in a first layer and anotherset of second access lines in a second layer of a composite stack thatincludes the first layer and the second layer. The first access linesand the second access lines may topologically intersect such that eachcross-point between a first access line and a second access line mayinclude a space for a memory component to occupy. For example, thecomposite stack may be configured to include a memory layer between thefirst layer and the second layer. The first layer may comprise a firstdielectric material, and a part of the first dielectric material may bereplaced with a conductive material (e.g., an electrode material) toform a set of first access lines at the first layer. Similarly, anotherset of second access lines may be formed at the second layer inaccordance with the fabrication techniques described herein.

To build a set of first access lines at the first layer, a set of firstvias formed at a top layer of the stack may be used to form via holesthrough the stack. The first vias may be arranged in a row in a firstdirection (e.g., a horizontal direction within a plane). The via holesmay provide access to the first dielectric material of the first layerlocated below the top layer. An isotropic etch step, by selectivelyremoving a portion of the first dielectric material through the viaholes, may create a series of cavities at the first layer. Whencongruent cavities (e.g., adjacent cavities) overlap, the congruentcavities may merge to form a first channel at the first layer.Subsequently, a conductive material (e.g., an electrode material) mayfill the first channel at the first layer through the via holes.

Then, a second channel may be formed in the electrode material withinthe first channel using the same set of first vias (and associated viaholes). Subsequently, a dielectric material may fill the second channel.The width of second channel may be less than the width of the firstchannel, and hence a portion of the electrode material may remain alongthe rim of the first channel, thereby forming a band (or elongated loop,or racetrack) of the electrode material formed at the first layer. Theband of electrode material may subsequently be severed (e.g., the shortends of the loop may be removed or otherwise separated from the longsides of the loop), thereby forming a set of first access lines (e.g., aset of word lines in the horizontal direction within the plane). One ormore sets of first access lines (e.g., one or more sets of word lines,each set of word lines formed at a respective first layer) may beconcurrently formed using the fabrication technique if the stackincludes one or more first layers.

Similar processing steps may be repeated for building a set of secondaccess lines at a second layer. A set of second vias may be arranged ina row in a different direction than the set of first vias (e.g., in avertical direction within the plane) such that the second vias may beused to form the set of second access lines at the second layerextending in a different direction than the first access lines (e.g., aset of bit lines at a second layer, where the bit lines in the set ofbit lines are orthogonal to the word lines in the set of word lines at afirst layer). One or more sets of second access lines (e.g., one or moresets of bit lines, each set of bit lines formed at a second layer) maybe concurrently formed using the fabrication techniques described hereinif the stack includes one or more second layers.

As described above, the composite stack may include a memory layerbetween the first layer and the second layer. In some cases, the memorylayer included in the initial stack comprises a sheet of memory material(e.g., a chalcogenide material). In other cases, the memory layerincluded in the initial stack may comprise a placeholder material (e.g.,a dielectric material), a portion of which may be replaced with a memorymaterial at a later stage of fabrication process (e.g., after forming a3D grid structure of access lines in other layers of the stack).

When the memory layer included in the initial stack comprises a sheet ofmemory material, the sheet of memory material may be modified bysubsequent processing steps used to form a 3D cross-point arraystructure. In some cases, the sheet of memory material may becomeperforated with a plurality of dielectric plugs (e.g., via holes filledwith a dielectric material). A pattern of the plurality of dielectricplugs may correspond to the pattern of the first vias and the secondvias—that is, the plurality of dielectric plugs may be a result offorming first access lines (e.g., word lines) using the first vias andsecond access lines (e.g., bit lines) using the second vias. In othercases, the sheet of memory material may become segmented into aplurality of memory material elements by channels formed in the memorymaterial using the first vias and the second vias. In some cases, eachmemory material element may be in a 3D rectangular shape. Further, eachmemory element may also be coupled with at least four electrodes (e.g.,two electrodes from above and two electrodes from below) resulting infour memory cells per memory material element.

When the memory layer included in the initial stack comprises aplaceholder material (e.g., a dielectric material), either the set offirst vias or the set of second vias may be used to form a racetrack(e.g., a band) of memory material within the placeholder material at thememory layer. Processing steps associated with forming a band of memorymaterial at a memory layer may be similar to the processing stepsassociated with forming a band of an electrode material at the first (orsecond) layer, but with the first channel filled with the memorymaterial (e.g., as opposed to filled with the electrode material). Aftera band of memory material is formed at a memory layer (e.g., using thefirst vias), the band of memory material may be segmented into aplurality of memory material elements by forming channels using theother set of vias (e.g., using the second vias), where the channelsintersect the band of memory material and thus divide the band of memorymaterial into multiple discrete memory material elements. In some cases,each memory material element may be in a 3D bar shape. Further, eachmemory element may also be coupled with at least three electrodes (e.g.,two electrodes from above and one electrode from below, or vice versa)resulting in two memory cells per memory material element.

In some cases, when the memory layer included in the initial stackcomprises a placeholder material (e.g., a dielectric material), a set ofcommon vias (e.g., a plurality of vias, each of which may be a part ofboth a set of first vias arranged in a row in a first direction and aset of second vias arranged in a row in a second direction) may be usedto form a set of 3D discs of a memory material at a memory layer, witheach common via used to form one 3D disc of the memory material at thememory layer. Subsequently, each of the 3D discs of the memory materialmay be segmented into four discrete memory material elements using theset of first vias and the set of second vias that include thecorresponding common via. For example, the set of first vias may be usedto form a first channel that divides (e.g., bisects) the 3D disc of thememory material in a first direction, and the set of second vias may beused to form a second channel that divides (e.g., bisects) the 3D discof the memory material in a second direction. Each of the four discretememory material elements may have a curved surface, which may correspondto an outer surface of the 3D disc from which the four discrete memorymaterial elements were formed. In some cases, each of the four discretememory material elements may be in a 3D wedge (e.g., pie slice) shape.Further, each memory element may be coupled with at least two electrodes(e.g., one electrode from above and one electrode from below) resultingin one memory cell per memory material element.

A subset of the first vias and the second vias may be used in a socketregion of a memory device. In a context of 3D cross-point memory arrayarchitecture, a socket region may include structures configured toprovide electrical connections between access lines of a memory arrayand other components (e.g., decoders, sense components) of a memorydevice. In some cases, a socket region may include structures having agap for the purpose of electrical isolation.

In some cases, the subset of the first vias and the second vias may beused to create such a gap in a target electrode (e.g., access lines suchas words lines or bit lines) by isotropically etching a portion of atarget electrode material at an electrode layer. In some cases, aphotomask having an opening may be used to create such a gap byanisotropically etching through the target electrode material.

In order to make connections between access lines and other componentsof a memory device, a subset of the first vias or the second vias may beused to form via holes that extend through the stack. The via holes maybe filled with a conductive material and an etch step may remove aportion of the conductive material to expose a dielectric buffer at atarget layer. The dielectric buffer may correspond to a dielectricmaterial, which may have been used to fill a second channel (e.g., achannel at some point surrounded by a band of electrode material) afterpartially removing an electrode material from a first channel. Thedielectric buffer may be removed, and a conductive material may fill thespace in the via hole to electrically couple the target electrodematerial at the target layer to a node of the other components of thememory device. Thus, a socket region including gaps and interconnectsmay be formed using the pattern of first vias and the second vias.

Features of the disclosure introduced above are further described belowin the context of a memory array configured with a cross-pointarchitecture. Specific examples of structures and techniques forfabricating a cross-point memory array are then described. These andother features of the disclosure are further illustrated by anddescribed with reference to apparatus diagrams, method of formationdiagrams, and flowcharts that relate to a cross-point memory array andrelated fabrication techniques.

FIG. 1 illustrates an example memory device 100 that supports across-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure. Memory device 100may also be referred to as an electronic memory apparatus. FIG. 1 is anillustrative representation of various components and features of thememory device 100. As such, it should be appreciated that the componentsand features of the memory device 100 are shown to illustrate functionalinterrelationships, not their actual physical positions within thememory device 100. In the illustrative example of FIG. 1, the memorydevice 100 includes a three-dimensional (3D) memory array 102. The 3Dmemory array 102 includes memory cells 105 that may be programmable tostore different states. In some embodiments, each memory cell 105 may beprogrammable to store two states, denoted as a logic 0 and a logic 1. Insome embodiments, a memory cell 105 may be configured to store more thantwo logic states. A memory cell 105 may, in some embodiments, include aself-selecting memory cell. It is to be understood that the memory cell105 may also include a memory cell of another type—e.g., a 3D XPoint™memory cell, a PCM cell that includes a storage component and aselection component, a CBRAM cell, or a FeRAM cell. Although someelements included in FIG. 1 are labeled with a numeric indicator, othercorresponding elements are not labeled, though they are the same orwould be understood to be similar, in an effort to increase thevisibility and clarity of the depicted features.

The 3D memory array 102 may include two or more two-dimensional (2D)memory arrays formed on top of one another. This may increase a numberof memory cells that may be placed or created on a single die orsubstrate as compared with a single 2D array, which in turn may reduceproduction costs, or increase the performance of the memory device, orboth. In the example depicted in FIG. 1, memory array 102 includes twolevels of memory cells 105 (e.g., memory cell 105-a and memory cell105-b) and may thus be considered a 3D memory array; however, the numberof levels may not be limited to two, and other examples may includeadditional levels. Each level may be aligned or positioned so thatmemory cells 105 may be aligned (exactly, overlapping, or approximately)with one another across each level, thus forming memory cell stacks 145.

In some embodiments, each row of memory cells 105 is connected to a wordline 110, and each column of memory cells 105 is connected to a bit line115. Both word lines 110 and bit lines 115 may also be genericallyreferred to as access lines. Further, an access line may function as aword line 110 for one or more memory cells 105 at one deck of the memorydevice 100 (e.g., for memory cells 105 below the access line) and as abit line 115 for one or more memory cells 105 at another deck of thememory device (e.g., for memory cells 105 above the access line). Thus,references to word lines and bit lines, or their analogues, areinterchangeable without loss of understanding or operation. Word lines110 and bit lines 115 may be substantially perpendicular to one anotherand may support an array of memory cells.

In general, one memory cell 105 may be located at the intersection oftwo access lines such as a word line 110 and a bit line 115. Thisintersection may be referred to as the address of the memory cell 105. Atarget memory cell 105 may be a memory cell 105 located at theintersection of an energized (e.g., activated) word line 110 and anenergized (e.g., activated) bit line 115; that is, a word line 110 and abit line 115 may both be energized in order to read or write a memorycell 105 at their intersection. Other memory cells 105 that are inelectronic communication with (e.g., connected to) the same word line110 or bit line 115 may be referred to as untargeted memory cells 105.

As shown in FIG. 1, the two memory cells 105 in a memory cell stack 145may share a common conductive line such as a bit line 115. That is, abit line 115 may be coupled with the upper memory cell 105-b and thelower memory cell 105-a. Other configurations may be possible, forexample, a third layer (not shown) may share a word line 110 with theupper memory cell 105-b.

In some cases, an electrode may couple a memory cell 105 to a word line110 or a bit line 115. The term electrode may refer to an electricalconductor, and may include a trace, wire, conductive line, conductivelayer, or the like that provides a conductive path between elements orcomponents of memory device 100. Thus, the term electrode may refer insome cases to an access line, such as a word line 110 or a bit line 115,as well as in some cases to an additional conductive element employed asan electrical contact between an access line and a memory cell 105. Insome embodiments, a memory cell 105 may comprise a chalcogenide materialpositioned between a first electrode and a second electrode. The firstelectrode may couple the chalcogenide material to a word line 110, andthe second electrode couple the chalcogenide material to a bit line 115.The first electrode and the second electrode may be the same material(e.g., carbon) or different material. In other embodiments, a memorycell 105 may be coupled directly with one or more access lines, andelectrodes other than the access lines may be omitted.

Operations such as reading and writing may be performed on memory cells105 by activating or selecting word line 110 and digit line 115.Activating or selecting a word line 110 or a digit line 115 may includeapplying a voltage to the respective line. Word lines 110 and digitlines 115 may be made of conductive materials such as metals (e.g.,copper (Cu), aluminum (Al), gold (Au), tungsten (W), titanium (Ti)),metal alloys, carbon, conductively-doped semiconductors, or otherconductive materials, alloys, compounds, or the like.

In some architectures, the logic storing device of a cell (e.g., aresistive component in a CBRAM cell, a capacitive component in a FeRAMcell) may be electrically isolated from the digit line by a selectioncomponent. The word line 110 may be connected to and may control theselection component. For example, the selection component may be atransistor and the word line 110 may be connected to the gate of thetransistor. Alternatively, the selection component may be a variableresistance component, which may comprise chalcogenide material.Activating the word line 110 may result in an electrical connection orclosed circuit between the logic storing device of the memory cell 105and its corresponding digit line 115. The digit line may then beaccessed to either read or write the memory cell 105. Upon selecting amemory cell 105, the resulting signal may be used to determine thestored logic state. In some cases, a first logic state may correspond tono current or a negligibly small current through the memory cell 105,whereas a second logic state may correspond to a finite current.

In some cases, a memory cell 105 may include a self-selecting memorycell having two terminals and a separate selection component may beomitted. As such, one terminal of the self-selecting memory cell may beelectrically connected to a word line 110 and the other terminal of theself-selecting memory cell may be electrically connected to a digit line115.

Accessing memory cells 105 may be controlled through a row decoder 120and a column decoder 130. For example, a row decoder 120 may receive arow address from the memory controller 140 and activate the appropriateword line 110 based on the received row address. Similarly, a columndecoder 130 may receive a column address from the memory controller 140and activate the appropriate digit line 115. For example, memory array102 may include multiple word lines 110, labeled WL_1 through WL_M, andmultiple digit lines 115, labeled DL_1 through DL_N, where M and Ndepend on the array size. Thus, by activating a word line 110 and adigit line 115, e.g., WL_2 and DL_3, the memory cell 105 at theirintersection may be accessed.

Upon accessing, a memory cell 105 may be read, or sensed, by sensecomponent 125 to determine the stored state of the memory cell 105. Forexample, a voltage may be applied to a memory cell 105 (using thecorresponding word line 110 and bit line 115) and the presence of aresulting current through the memory cell 105 may depend on the appliedvoltage and the threshold voltage of the memory cell 105. In some cases,more than one voltage may be applied. Additionally, if an appliedvoltage does not result in current flow, other voltages may be applieduntil a current is detected by sense component 125. By assessing thevoltage that resulted in current flow, the stored logic state of thememory cell 105 may be determined. In some cases, the voltage may beramped up in magnitude until a current flow is detected. In other cases,predetermined voltages may be applied sequentially until a current isdetected. Likewise, a current may be applied to a memory cell 105 andthe magnitude of the voltage to create the current may depend on theelectrical resistance or the threshold voltage of the memory cell 105.

In some cases, the memory cell 105 (e.g., a self-selecting memory cell)may comprise a chalcogenide material. The chalcogenide material ofself-selecting memory cell may remain in an amorphous state during theself-selecting memory cell operation. In some cases, operating theself-selecting memory cell may include applying various shapes ofprogramming pulses to the self-selecting memory cell to determine aparticular threshold voltage of the self-selecting memory cell—that is,a threshold voltage of a self-selecting memory cell may be modified bychanging a shape of a programming pulse, which may alter a localcomposition of the chalcogenide material in amorphous state. Aparticular threshold voltage of the self-selecting memory cell may bedetermined by applying various shapes of read pulses to theself-selecting memory cell. For example, when an applied voltage of aread pulse exceeds the particular threshold voltage of theself-selecting memory cell, a finite amount of current may flow throughthe self-selecting memory cell. Similarly, when the applied voltage of aread pulse is less than the particular threshold voltage of theself-selecting memory cell, no appreciable amount of current may flowthrough the self-selecting memory cell. In some embodiments, sensecomponent 125 may read information stored in a selected memory cell 105by detecting the current flow or lack thereof through the memory cell105. In this manner, the memory cell 105 (e.g., a self-selecting memorycell) may store one bit of data based on threshold voltage levels (e.g.,two threshold voltage levels) associated with the chalcogenide material,with the threshold voltage levels at which current flows through thememory cell 105 indicative of a logic state stored by the memory cell105. In some cases, the memory cell 105 may exhibit a certain number ofdifferent threshold voltage levels (e.g., three or more thresholdvoltage levels), thereby storing more than one bit of data.

Sense component 125 may include various transistors or amplifiers inorder to detect and amplify a difference in the signals associated witha sensed memory cell 105, which may be referred to as latching. Thedetected logic state of memory cell 105 may then be output throughcolumn decoder 130 as output 135. In some cases, sense component 125 maybe part of a column decoder 130 or row decoder 120. Or, sense component125 may be connected to or in electronic communication with columndecoder 130 or row decoder 120. FIG. 1 also shows an alternative optionof arranging sense component 125-a (in a dashed box). An ordinary personskilled in the art would appreciate that sense component 125 may beassociated either with column decoder or row decoder without losing itsfunctional purposes.

A memory cell 105 may be set or written by similarly activating therelevant word line 110 and digit line 115, and at least one logic valuemay be stored in the memory cell 105. Column decoder 130 or row decoder120 may accept data, for example input/output 135, to be written to thememory cells 105.

In some memory architectures, accessing the memory cell 105 may degradeor destroy the stored logic state and re-write or refresh operations maybe performed to return the original logic state to memory cell 105. InDRAM, for example, the capacitor may be partially or completelydischarged during a sense operation, corrupting the stored logic state,so the logic state may be re-written after a sense operation.Additionally, in some memory architectures, activating a single wordline 110 may result in the discharge of all memory cells in the row(e.g., coupled with the word line 110); thus, several or all memorycells 105 in the row may need to be re-written. But in non-volatilememory, such as self-selecting memory, PCM, CBRAM, FeRAM, or NANDmemory, accessing the memory cell 105 may not destroy the logic stateand, thus, the memory cell 105 may not require re-writing afteraccessing.

The memory controller 140 may control the operation (e.g., read, write,re-write, refresh, discharge) of memory cells 105 through the variouscomponents, for example, row decoder 120, column decoder 130, and sensecomponent 125. In some cases, one or more of the row decoder 120, columndecoder 130, and sense component 125 may be co-located with the memorycontroller 140. Memory controller 140 may generate row and columnaddress signals in order to activate the desired word line 110 and digitline 115. Memory controller 140 may also generate and control variousvoltages or currents used during the operation of memory device 100. Ingeneral, the amplitude, shape, polarity, and/or duration of an appliedvoltage or current discussed herein may be adjusted or varied and may bedifferent for the various operations discussed in operating the memorydevice 100. Furthermore, one, multiple, or all memory cells 105 withinmemory array 102 may be accessed simultaneously; for example, multipleor all cells of memory array 102 may be accessed simultaneously during areset operation in which all memory cells 105, or a group of memorycells 105, are set to a single logic state.

The fabrication techniques described herein may be used to form aspectsof memory device 100, including some aspects simultaneously. Forexample, the fabrication techniques described herein may be used to formthe lower word lines 110 (labeled in FIG. 1 as WL_B1) concurrently withforming the upper word lines 110 (labeled in FIG. 1 as WL_T1), as wellas word lines at any number of additional layers (not shown). Both thelower word lines 110 and the upper word lines 110 may be disposed inlayers initially comprising a same dielectric material, and a single viapattern may be used for one or more processing steps—e.g., removingportions of the dielectric material and replacing it with conductivematerial—that concurrently form the lower level word lines 110 and theupper level word lines 110 at their respective layers. Similarly, thefabrication techniques described herein may be used to form the lowermemory cells 105 (e.g., memory cell 105-a illustrated in FIG. 1 as solidblack circles) concurrently with forming the upper memory cells 105(e.g., memory cell 105-b illustrated in FIG. 1 as white circles), aswell as memory cells 105 at any number of additional decks of memorycells (not shown).

FIG. 2 illustrates an example of a 3D memory array 202 that supports across-point memory array and related fabrication techniques inaccordance with embodiments of the present disclosure. Memory array 202may be an example of portions of memory array 102 described withreference to FIG. 1. Memory array 202 may include a first array or deck205-a of memory cells that is positioned above a substrate 204 and asecond array or deck 205-b of memory cells on top of the first array ordeck 205-a. Memory array 202 may also include word line 110-a and wordline 110-b, and bit line 115-a, which may be examples of word lines 110and a bit line 115, as described with reference to FIG. 1. As in theillustrative example depicted in FIG. 2, memory cells of the first deck205-a and the second deck 205-b may each include a self-selecting memorycell. In some examples, memory cells of the first deck 205-a and thesecond deck 205-b may each include another type of memory cell that maybe suitable for a cross-point architecture—e.g., a CBRAM cell or anFeRAM cell. Although some elements included in FIG. 2 are labeled with anumeric indicator, other corresponding elements are not labeled, thoughthey are the same or would be understood to be similar, in an effort toincrease the visibility and clarity of the depicted features.

In some cases, self-selecting memory cells of the first deck 205-a mayeach include first electrode 215-a, chalcogenide material 220-a, andsecond electrode 225-a. In addition, self-selecting memory cells of thesecond memory deck 205-b may each include first electrode 215-b,chalcogenide material 220-b, and second electrode 225-b. In someembodiments, access lines (e.g., word line 110, bit line 115) mayinclude an electrode layer (e.g., a conformal layer), in lieu ofelectrodes 215 or 225 and thus may comprise multi-layered access lines.In such embodiments, the electrode layer of the access lines mayinterface with a memory material (e.g., chalcogenide material 220). Insome embodiments, access lines (e.g., word line 110, bit line 115) maydirectly interface with a memory material (e.g., chalcogenide material220) without an electrode layer or an electrode in-between.

The self-selecting memory cells of the first deck 205-a and second deck205-b may, in some embodiments, have common conductive lines such thatcorresponding (e.g., vertically aligned in y-direction) self-selectingmemory cells of each deck 205-a and 205-b may share bit lines 115 orword lines 110 as described with reference to FIG. 1. For example, firstelectrode 215-b of the second deck 205-b and second electrode 225-a ofthe first deck 205-a may both be coupled to bit line 115-a such that bitline 115-a is shared by vertically aligned and adjacent self-selectingmemory cells (in y-direction).

In some embodiments, memory array 202 may include an additional bit line(not shown) such that the first electrode 215-b of the second deck 205-bmay be coupled with the additional bit line and the second electrode225-a of the first deck 205-a may be coupled with the bit line 115-a.The additional bit line may be electrically isolated from the bit line115-a (e.g., an insulating material may be interposed between theadditional bit line and the bit line 115-a). As a result, the first deck205-a and the second deck 205-b may be separated and may operateindependently of each other. In some cases, an access line (e.g., eitherword line 110 or bit line 115) may include a selection component (e.g.,a two-terminal selector device, which may be configured as one or morethin-film materials integrated with the access line) for a respectivememory cell at each cross-point. As such, the access line and theselection component may together form a composite layer of materialsfunctioning as both an access line and a selection component.

The architecture of memory array 202 may in some cases be referred to asan example of a cross-point architecture, as a memory cell may be formedat a topological cross-point between a word line 110 and a bit line 115as illustrated in FIG. 2. Such a cross-point architecture may offerrelatively high-density data storage with lower production costscompared to some other memory architectures. For example, a memory arraywith a cross-point architecture may have memory cells with a reducedarea and, resultantly, may support an increased memory cell densitycompared to some other architectures. For example, a cross-pointarchitecture may have a 4F² memory cell area, where F is the smallestfeature size (e.g., a minimum feature size), compared to otherarchitectures with a 6F² memory cell area, such as those with athree-terminal selection component. For example, a DRAM memory array mayuse a transistor, which is a three-terminal device, as the selectioncomponent for each memory cell, and thus a DRAM memory array comprisinga given number of memory cells may have a larger memory cell areacompared to a memory array with a cross-point architecture comprisingthe same number of memory cells.

While the example of FIG. 2 shows two memory decks, other configurationsmay include any number of decks. In some embodiments, one or more of thememory decks may include self-selecting memory cells that includechalcogenide material 220. In other embodiments, one or more of thememory decks may include FeRAM cells that include a ferroelectricmaterial. In yet another embodiments, one or more of the memory decksmay include CBRAM cells that include a metallic oxide or a chalcogenidematerial. Chalcogenide materials 220 may, for example, include achalcogenide glass such as, for example, an alloy of selenium (Se),tellurium (Te), arsenic (As), antimony (Sb), carbon (C), germanium (Ge),and silicon (Si). In some embodiment, a chalcogenide material havingprimarily selenium (Se), arsenic (As), and germanium (Ge) may bereferred to as SAG-alloy.

FIGS. 3 through 4 illustrate various aspects of fabrication techniquesof the present disclosure. For example, FIGS. 3 through 4 illustrateaspects of creating cavities (e.g., concurrently) at one or more buriedtarget layers of a composite stack, each target layer comprising atarget material. Vias may be used to create cavities in the targetmaterial at a target buried layer, and cavities may be sized such thatadjacent (e.g., contiguous) cavities may overlap and thus may merge toform a channel (e.g., a tunnel) at the target buried layer. The channelmay therefore be aligned with the vias-namely, the channel may intersecta vertical axis of each via (e.g., an orthogonal direction with respectto a substrate) used to create the channel. The channel may be filledwith a filler material (e.g., a conductive material or a memorymaterial), and in some cases—using similar cavity-etching andchannel-creation techniques—a narrower channel within the fillermaterial at the target layer may be created using the same vias.Creating the narrower channel within the filler material may result inan elongated loop (e.g., a band, ring, or racetrack) of filler materialsurrounding the narrower channel, and the narrower channel may be filledwith a second material (e.g., a dielectric or other insulatingmaterial). The loop of filler material may subsequently be severed tocreate discrete segments of the filler material at the target buriedlayer. These segments may be configured as aspects of a 3D memory arraysuch as the examples of memory array 102 illustrated in FIG. 1 or memoryarray 202 illustrated in FIG. 2.

For example, the fabrication techniques described herein may facilitateconcurrent formation of like structures at different lower layers—e.g.,sets of conductive lines (e.g., access lines such as word lines 110 andbit lines 115) or sets of memory material elements configured with acommon layout in which each set of conductive lines or set of memorymaterial elements exists in a different lower layer of the stack. Assuch, the fabrication techniques described herein may facilitateconcurrent formation of two or more decks of memory cells, each deckcomprising a 3D cross-point structure of access lines (e.g., word lines,bit lines) and memory cells.

FIGS. 3A-3C illustrate exemplary fabrication techniques in accordancewith the present disclosure. In FIG. 3A, processing step 300-a isdepicted. Processing step 300-a may include one or more thin-filmdeposition or growth steps that form a stack 305-a. FIG. 3A illustratesa sideview of the stack 305-a, which may be an initial stack of layersprior to the application of further fabrication techniques as describedherein. The stack 305-a may be formed above a substrate (e.g., substrate204 described with reference to FIG. 2). The stack 305-a may include anumber of different layers of various materials, and thus may in somecases be referred to as a composite stack, with the specific materialsselected based on a number of factors—e.g., a desired kind of memorytechnology (e.g., self-selecting memory, FeRAM, CBRAM), a desired numberof decks of memory cells (e.g., two or more decks of memory cells), etc.As depicted in the illustrative example of FIG. 3A, the stack 305-a mayinclude an initial stack of layers suitable for fabricating two sets ofburied lines (e.g., a first set of buried lines at a relatively upperlayer that includes word line 110-b and a second set of buried lines ata relatively lower layer that includes word line 110-a as described withreference to FIG. 2), each set of buried lines at a layer initiallycomprising a first material. The stack 305-a may also include an initialstack of layers suitable for fabricating a single set of buried lines ata layer initially comprising a second material (e.g., a single set ofburied lines that includes bit line 115-a described with reference toFIG. 2).

In some examples, the stack 305-a may include a layer 310, which may bea top layer of the stack 305-a. In some embodiments, the layer 310includes a dielectric material. In some embodiments, the layer 310includes a hardmask material such that the layer 310 may be referred toas a hardmask layer. A pattern of vias may be formed in the layer 310 asa result of, for example, a photolithography step.

The stack 305-a may also include layers 315. In the illustrative exampleof FIG. 3A, the stack 305-a includes two layers 315, namely layer 315-aand layer 315-b. In some embodiments, the layers 315 may each include afirst dielectric material. As illustrated in FIG. 5, each layer 315 mayultimately be modified to include a set of first conductive lines, eachfirst conductive line comprising an electrode material. Hence, thelayers 315 may be referred to as first electrode layers. In some cases,first conductive lines may be referred to as buried conductive linesbecause the first conductive lines are positioned below a surface layer(e.g., below layer 310). First conductive lines may extend in a firstdirection. Electrodes at two or more first electrode layers—that is,electrodes formed within two or more layers each comprising the firstdielectric material—may be formed concurrently in accordance with thefabrication techniques described herein.

The stack 305-a may also include layers 320. In the illustrative exampleof FIG. 3A, the stack 305-a includes two layers 320, namely layer 320-aand layer 320-b, but any number of layers 320 is possible. In someembodiments, each layer 320 may comprise a memory material (e.g., achalcogenide material 220) formed as a part of the stack 305-a. In otherembodiments, each layer 320 may comprise a placeholder material, whichmay later be partially removed and replaced by a memory material (e.g.,a chalcogenide material 220 described with reference to FIG. 2). Asillustrated in FIGS. 9 through 12, each layer 320 may ultimately includememory cells formed concurrently in accordance with the fabricationtechniques described herein. Hence, whether initially comprising amemory material or a placeholder material that is to later be replacedby a memory material, a layer 320 may be referred to as a memory layer.

The stack 305-a may also include a layer 325. In the illustrativeexample of FIG. 3A, the stack 305-a includes a single layer 325, but anynumber of layers 325 is possible. In some embodiments, each layer 325may include a second dielectric material. As illustrated in FIG. 5, thelayer 325 may ultimately be modified to include a set of secondconductive lines comprising an electrode material. Hence, each layer 325may be referred to as a second electrode layer. In some cases, secondconductive lines may be referred to as buried conductive lines becausethe second conductive lines are positioned below a surface layer (e.g.,below layer 310). Second conductive lines may extend in a seconddirection, which may be different than the first direction. In someembodiments, the second direction may be substantially perpendicular tothe first direction in which first conductive lines extend. Electrodesat two or more second electrode layers—that is, electrodes formed withintwo or more layers each comprising the second dielectric material—may beformed concurrently in accordance with the fabrication techniquesdescribed herein.

The stack 305-a may include a layer 330. In some cases, the layer 330may include an etch-stop material to withstand various etch processesdescribed herein. The layer 330 may include the same hardmask materialas the layer 310 in some cases, or may include a different material. Insome cases, the layer 330 may provide a buffer layer with respect tocircuits or other structures formed in a substrate (e.g., substrate 204described with reference to FIG. 2) or other layers (not shown), whichmay be below layer 330. In some cases, the layer 330 may provide abuffer layer with respect to one or more decks of memory cellsfabricated in earlier processing steps.

In FIG. 3B, processing step 300-b is depicted. FIG. 3B illustrates a via335 (e.g., a top-down view of via 335) and a sideview of a stack 305-b.The stack 305-b may correspond to the stack 305-a when processing step300-b is complete. Processing step 300-b may include a photolithographystep that transfers a shape of via 335 onto the stack 305-a. In someexamples, the photolithography step may include forming a photoresistlayer (not shown) having a shape of via 335 (e.g., defined by lack ofthe photoresist material inside of the via 335) on top of the layer 310.In some examples, an etch processing step may follow thephotolithography step to transfer the shape of via 335 onto layer 310such that the shape of via 335 established within layer 310 may berepeatedly used as an access via during subsequent processingsteps-namely, layer 310 including the shape of via 335 may function as ahardmask layer providing an access via in the shape of via 335 for thesubsequent processing steps.

Processing step 300-b may further include an anisotropic etch step,which may remove materials from the stack 305-a based on the shape ofvia 335. In some cases, processing step 300-b may include a singleanisotropic etch step that etches through hardmask layer 310 andadditional lower layers based on the shape of via 335 in a photoresistlayer above hardmask 310. In other cases, via 335 may exist in hardmasklayer 310, and a subsequent anisotropic etch step may etch throughadditional lower layers based on the shape of via 335 in hardmask layer310.

An anisotropic etch step may remove a target material in one direction(e.g., an orthogonal direction with respect to a substrate) by applyingan etchant (e.g., a mixture of one or more chemical elements) to thetarget material. Also, the etchant may exhibit a selectivity (e.g., achemical selectivity) directed to remove only the target material (e.g.,layer 310) while preserving other materials (e.g., photoresist) exposedto the etchant. An anisotropic etch step may use one or more etchantsduring a single anisotropic etch step when removing one or more layersof materials. In some cases, an anisotropic etch step may use an etchantexhibiting a selectivity targeted to remove a group of materials (e.g.,oxides and nitrides) while preserving other groups of materials (e.g.,metals) exposed to the etchant.

During processing step 300-b, the anisotropic etch step may produce ahole (e.g., a via hole 345) penetrating through the stack 305-a in whichthe shape and width 340 (e.g., diameter) of the via hole 345substantially corresponds to the width of the via 335. As an exampledepicted in FIG. 3B, the anisotropic etch step in processing step 300-bmay include four different kinds of etchants—e.g., different etchantsfor layer 310, layers 315, layers 320, and layer 325, respectively. Theanisotropic etch step may terminate at layer 330. In some examples, thewidth 340 is the same (substantially same) at each layer of the stack305-b.

In FIG. 3C, processing step 300-c is depicted. FIG. 3C illustrates atop-down view of cavities 336 and a sideview of a stack 305-c. The stack305-c may correspond to the stack 305-b when processing step 300-c iscomplete. The cavities 336 may represent a top-down view of one or morecavities formed in one or more buried layers (e.g., layer 315-a andlayer 315-b) of the stack 305-c. Each cavity 336 may share a commoncenter with the via 335—e.g., the via 335 and each cavity 336 may beconcentric about a vertical axis of the via 335 (e.g., an orthogonaldirection with respect to a substrate) as illustrated in FIG. 3C. Thevia hole 345 may expose a target material (e.g., the first dielectricmaterial of layers 315) within one or more target layers (e.g., layers315-a and 315-b), and processing step 300-c may include an isotropicetch step that removes target material from each target layer to producea cavity 336 within each target layer and formed around the via hole 345(e.g., the via hole 345 penetrating the stack 305-b).

An isotropic etch step may remove a target material in all directions.An isotropic etch step may apply an etchant (e.g., a mixture of one ormore chemical elements) exhibiting a selectivity (e.g., a chemicalselectivity) directed to remove only a target material while preservingother materials exposed to the etchant. An isotropic etch step mayemploy different etchant(s) during a single isotropic etch step whenremoving one or more layers of materials. In some cases, an isotropicetchant (e.g., an etchant used in an isotropic etch step) may bechemically selective between a first dielectric material and at leastone other material in the stack.

As in the example depicted in FIG. 3C, an isotropic etch step mayconcurrently remove a portion of the first dielectric material from eachlayer 315 (e.g., from both layer 315-a and layer 315-b) while preserving(or substantially preserving) other materials (e.g., at other layers) inthe stack 305-b exposed to the etchant—e.g., based at least in part onthe etchant's selectivity targeted to remove the first dielectricmaterial of layers 315. As a result of the isotropic etch step, theouter width (e.g., width 350) of each cavity 336 may be greater than thewidth (e.g., width 340) of via hole 345. As such, an outer width of eachcavity 336 (e.g., width 350) may be determined by the width of via 335(e.g., the width of via hole 345) and an amount of target materialremoved from each target layer during processing step 300-c.Additionally, each cavity 336 may be referred to as a buried cavity 336because it may be formed in one or more buried layers—e.g., in one ormore layers 315 comprising a first dielectric material and positionedbelow the layer 310 in the stack 305-c.

It is to be understood that any number of buried cavities 336 may beformed, and in some cases may be concurrently formed, within a stack oflayers using processing steps 300-a through 300-c. A number of distincttarget layers—that is, a number of distinct layers comprising the targetmaterial (e.g., the first dielectric material initially included inlayers 315) and separated by other layers—may determine the number ofburied cavities 336 concurrently created within the stack 305-c usingthe isotropic etch step based on via 335. The via hole 345 created usingvia 335 and penetrating through the stack may provide access (e.g., apath) for etchants during the isotropic etch step such that theisotropic etch step may remove a part of each buried target layerthrough the via hole 345 so as to create buried cavities 336 at eachtarget layer. Hence, the via 335 may be referred to as an access via insome cases.

FIGS. 4A-4B illustrate exemplary via patterns and structures thatsupport a cross-point memory array and related fabrication techniques inaccordance with the present disclosure. FIG. 4A illustrates a via 410and an associated first cavity 415. Via 410 may be an example of via 335described with reference to FIG. 3. First cavity 415 may be an exampleof cavity 336 described with reference to FIG. 3. First cavity 415 mayrepresent a cavity (e.g., a buried cavity) concentric about a verticalaxis of via 410 (e.g., a vertical axis with respect to a substrate) andformed in a target material at a buried layer of a stack (e.g., stack305).

FIG. 4A also illustrates channel 420, which may be formed at the buriedlayer using multiple vias 410 (e.g., five vias 410, as illustrated inFIG. 4A) arranged in a linear configuration, as an example. A firstcavity 415 corresponding to each via 410 may be formed in the targetmaterial at the buried layer. The distance between vias 410 and theamount of target material removed when forming each first cavity 415 maybe configured such that adjacent, or contiguous, first cavities 415 maymerge (e.g., may overlap as represented by oval shapes 425 withinchannel 420) to form channel 420. Thus, channel 420 may be aligned withthe set of vias 410 corresponding to the first cavities 415 that mergeto form channel 420—e.g., channel 420 may intersect a vertical axis ofeach via 410 (e.g., a vertical axis with respect to a substrate).Channel 420 may have a width same as the width of each first cavity 415and a length determined by the number of merged first cavities 415(e.g., the number of vias 410 arranged in a linear fashion, which may beany number).

FIG. 4A also illustrates filled channel 430. Filled channel 430 maycorrespond to channel 420 after completing at least two subsequentprocessing steps—e.g., a first processing step of depositing a fillermaterial in the channel 420 and associated via holes, followed by asecond processing step of removing the filler material from theassociated via holes using an etch process (e.g., an anisotropic etchstep such as processing step 300-b described with reference to FIG. 3).In other words, filled channel 430 may include a filler material in thechannel 420. Although channel 420 and filled channel 430 are illustratedas having a linear configuration corresponding to the linearconfiguration of the associated set of vias 410, it is to be understoodthat channel 420 and filled channel 430 may take any arbitrary shape(e.g., L-shape, X-shape, T-shape, S-shape) corresponding to the spatialconfiguration of the associated set of vias 410. Thus, a set of vias 410may be positioned to define an outline of any intended shape, with thespacing between adjacent vias configured such that contiguous cavitiesat the same target layer, each cavity corresponding to a via 410, mergeto form a channel of any intended shape at the target layer. Further, insome embodiments, multiple channels 420 and filled channels 430 may beconjoined to form various shapes of buried lines or interconnects (e.g.,when the set of filled channels 430 includes a conductive material).

FIG. 4A also illustrates via 410 and associated second cavity 435.Second cavity 435 may be an example of a cavity 336 described withreference to FIG. 3. The width of second cavity 435 may be less than thewidth of first cavity 415. As described above, a size of a cavityassociated with a via 410 may vary depending on the width of the via 410and an amount of target material removed during an isotropic etch step.Second cavity 435 may represent a cavity (e.g., a buried cavity)concentric about a vertical axis of via 410 (e.g., a vertical axis withrespect to a substrate) and formed in a target material at a buriedlayer of a stack (e.g., in the filler material within filled channel430).

FIG. 4A also illustrates channel 440, which may be formed at the buriedlayer using multiple vias 410 (e.g., five vias 410, as illustrated inFIG. 4A) arranged in a linear configuration, as an example. A secondcavity 435 corresponding to each via 410 may be formed in a targetmaterial at the buried layer, which may be the filler material depositedto form filled channel 430. The distance between vias 410 and the amountof target material removed when forming each second cavity 435 may beconfigured such that adjacent, or contiguous, second cavities 435 maymerge to form channel 440. Thus, channel 440 may be aligned with the setof vias 410 corresponding to the second cavities 435 that merge to formchannel 440—e.g., channel 440 may intersect a vertical axis of each via410 (e.g., a vertical axis with respect to a substrate). Channel 440 mayhave a width same as the width of each second cavity 435 and a lengthdetermined by the number of merged second cavities 435 (e.g., the numberof vias 410 arranged in a linear fashion, which may be any number).

FIG. 4A also illustrates an intermediate pattern 445, which maycorrespond to a channel 440 formed within filled channel 430. Theintermediate pattern 445 may illustrate a result of one or moreprocessing steps in which a portion of the filler material present in afilled channel 430 is removed to form second cavities 435 and thuschannel 440 within the filled channel 430. Channel 440 may be formedusing the same set of vias 410 used to form channel 420 and filledchannel 430, but may have a narrower width (due to the width of themerged second cavities 435 being less than the width of the merged firstcavities 415), and with the filler material within filled channel 430serving as the target material during the formation of channel 440. Asthe width of channel 440 may be less than width of the filled channel430, a portion of the filler material within the filled channel 430 mayremain along the outer boundary of filled channel 430, surroundingchannel 440. Thus, following the formation of channel 440, a loop offiller material from filled channel 430 may remain at the target layer;the loop may be elongated with a length larger than width and may alsobe referred to as a racetrack or a band.

FIG. 4A also illustrates loop 450, which may correspond to channel 440being filled with a dielectric material using the corresponding set ofvias 410. Thus, loop 450 may comprise a loop of the filler material withwhich channel 420 was filled (that is, the filler material used to formfilled channel 430) surrounding the dielectric material with whichchannel 440 was filled. In some cases, the dielectric materialsurrounded by loop 450 may be the same material as the target materialcomprising the target layer at which channel 420 was formed (e.g., adielectric material 315 or 325 described with reference to FIG. 3), andthe filler material may be a conductive material, and thus loop 450 maybe loop of conductive material. A loop 450 of conductive material may besevered into multiple discrete segments, which may function aselectrodes (e.g., access lines). A loop 450 of memory material may besevered into multiple discrete segments, which may function as one ormore memory cells (e.g., each discrete segment of memory material, whichmay be referred to as a memory material element, may be configured tocomprise one or more memory cells 105).

Although FIG. 4A illustrates the successive formation of five firstcavities 415 (which merge to form channel 420), filled channel 430, fivesecond cavities 435 (which merge to from channel 440), and thus loop 450using five vias 410, it is to be understood that similar techniques maybe applied using any number of vias 410. Similarly, although FIG. 4Aillustrates the successive formation of five first cavities 415 (whichmerge to form channel 420), filled channel 430, five second cavities 435(which merge to form channel 440), and thus loop 450 at a single targetlayer of a stack, it is to be understood that the stack may comprisemultiple distinct target layers, each comprising the same targetmaterial, and that the techniques described with reference to FIG. 4Amay thus result in multiple loops 450, one at each target layer in thestack.

FIG. 4B illustrates a diagram 401, which illustrates a top-down view ofa first plurality of loops 455 (e.g., loops 455-a through 455-d)extending in a first direction (e.g., as drawn on the page, x-direction)and a second plurality of loops 460 (e.g., loops 460-a through 460-d)extending in a second direction (e.g., as drawn on the page,y-direction). The first plurality of loops 455 may be formed at one ormore first layers (e.g., layers 315) of a stack (e.g., stack 305), andthe second plurality of loops 460 may be formed at one or more secondlayers (e.g., layer 325) of a stack (e.g., stack 305).

Each loop of the first plurality of loops 455 and of the secondplurality of loops 460 of FIG. 4B may be an example of a loop 450 ofFIG. 4A. Hence, each of horizontal loops (e.g., loops 455-a through455-d extending in x-direction) may have been formed using a set of vias(not shown) arranged in a row in the horizontal direction (x-direction).In addition, each of vertical loops (e.g., loops 460-a through 460-dextending in y-direction) may have been formed using a set of vias (notshown) arranged in a row in the vertical direction (y-direction). Thediagram 401 illustrates the first plurality of loops 455 and the secondplurality of loops 460 in a substantially perpendicular arrangement—thatis, with the first plurality of loops 455 substantially perpendicular tothe second plurality of loops 460. It is to be understood that the firstplurality of loops and the second plurality of loops may be in anyangular arrangement.

In some cases, each loop of the first plurality of loops 455 and thesecond plurality of loops 460 may be of a conductive material (e.g.,electrode material as described with reference to FIGS. 1 and 2). Theends (e.g., the shorter sides) of each loop 455, 460 may be removed orotherwise severed from the sides (e.g., the longer sides) of the loop455, 460 in a subsequent processing step, and the remaining portions ofeach loop 455, 460 (e.g., the longer sides) may function as access linesfor a memory device (e.g., as word lines 110 and bit lines 115 asdescribed with reference to FIGS. 1 and 2). In some embodiments, thefirst plurality of loops 455 may exist in one or more first layers(e.g., layers 315 as described with reference to FIG. 3) and the secondplurality of loops 460 may exist in one or more second layers (e.g.,layers 325 as described with reference to FIG. 3). As such, the firstplurality of loops 455 and the second plurality of loops 460 may form amatrix of access lines (e.g., a grid structure of access lines) in a 3Dcross-point configuration as described with reference to FIGS. 1 and 2.Each topological cross-point of access lines (e.g., a cross-point 465formed between loop 455-d and loop 460-a) may correspond to a memorycell (e.g., a memory cell 105 as described with reference to FIG. 1),and the memory cell may be interposed between the intersecting accesslines. Thus, the exemplary diagram 401 may support 64 memory cells in asingle deck of memory cells. It is to be understood that any number ofdecks of memory cells, each comprising any number of access lines, maybe disposed on top of one another and formed simultaneously using asingle pattern of vias.

FIGS. 5 through 8 illustrate the construction of an exemplarythree-dimensional structure of access lines (e.g., a grid structure ofaccess lines) in accordance with fabrication techniques of the presentdisclosure. As described above, the fabrication techniques describedherein may use a pattern of vias, and FIGS. 5 through 8 illustratemethods of using the pattern of vias to facilitate concurrentconstruction of a three-dimensional structure of access lines (e.g., agrid structure of access lines) such that two or more decks of a 3Dmemory array may be formed at the same time.

FIG. 5 illustrates example methods of forming a 3D cross-point memoryarray structure that may include two or more decks of memory cells inaccordance with the present disclosure. FIG. 5, as an illustrativeexample of fabrication techniques described herein, may show theconcurrent formation of two sets of access lines-namely, an upper deckmay include one set of word lines 531-a and 531-b, and a lower deck mayinclude another set of word lines 531-c and 531-d. Word lines 531 may beexamples of two sets of word lines 110 (e.g., a set of word lines WL_T1through WL_TM and another set of word lines WL_B1 through WL_BM) for twodecks of memory array 102 as described with reference to FIG. 1 or apair of word lines 110-a for first deck of memory cells 205-a and a pairof word lines 110-b for second deck of memory cells 205-b as describedwith reference to FIG. 2.

The stack of layers in FIG. 5 may correspond to stack 305 as describedwith reference to FIG. 3. For example, a hardmask (HM) layer maycorrespond to layer 310 (e.g., a top layer of stack 305), a dielectric 1(D1) layer may correspond to layer 315-a and layer 315-b, a dielectric 2(D2) layer may correspond to layer 325, and a placeholder dielectric ora memory material (DM) layer may correspond to layer 320-a and layer320-b, respectively. The DM layer may include a memory material (e.g., amemory material formed as a part of the initial stack 305-a) or aplaceholder material within which memory material may later bedeposited. The placeholder material may be a third dielectric materialin some cases. In some cases, a DM layer may be referred to as a memorylayer or a placeholder layer. In some cases, a D1 layer may be referredto as a first dielectric layer, and a D2 layer may be referred to as asecond dielectric layer.

FIG. 5 also includes diagrams 501, 502, and 503. Diagram 501, as anillustrative example, may depict a top view of a stack that includesthree rows of vias (e.g., vias 335 or vias 410 as described withreference to FIG. 3 or FIG. 4) and six access lines (e.g., word lines)formed using the rows of vias, with each row of vias used to form oneloop (e.g., loop 455-a described with reference to FIG. 4) (loop endsnot shown in diagram 501) and thus two access lines (e.g., word lines110 or bit lines 115 as described with reference to FIGS. 1 and 2)between which the row of vias is interposed. Diagram 502 illustratescross-sectional side views of the stack corresponding to the center of avia of diagram 501, as denoted by reference line A-A in diagram 501, atvarious stages of processing (e.g., processing steps 505 through 530).Diagram 503 illustrates cross-sectional side views of the stackcorresponding to a space between vias of diagram 501, as denoted byreference line B-B, at various stages of processing (e.g., processingsteps 505 through 530).

At processing step 505, a photolithography step (e.g., photolithographystep described with reference to FIG. 3) may transfer the pattern ofvias illustrated in diagram 501 onto the stack (e.g., stack 305). Insome cases, a plurality of holes (e.g., holes associated with thepattern of vias illustrated in diagram 501) that each have a first width(e.g., width 506) may be formed at a top layer (e.g., HM layer) of astack. The first width (e.g., width 506) may correspond to a width ofvia 335 or 410 as illustrated with reference to FIGS. 3 and 4.Subsequently, an anisotropic etch step may remove some materials fromthe stack creating via holes that penetrate through the stack. Diagram502 at processing step 505 illustrates one of the vias and acorresponding via hole that penetrates the stack and exposes buriedlayers of the stack to subsequent processing steps. Diagram 503 atprocessing step 505 may illustrate that, between vias, the initial stack(e.g., stack 305) may remain unchanged during processing step 505.Processing step 505 may be an example of processing step 300-b asdescribed with reference to FIG. 3.

At processing step 510, an isotropic etch step may selectively removesome portion of the dielectric material at each D1 layer in the stack(e.g., layer 315-a and layer 315-b) that is exposed to an etchant of theisotropic etch. The dielectric material at each D1 layer may be referredto as a first dielectric material. The etchant of isotropic etch atprocessing step 510 may exhibit a selectivity with respect to othermaterials of the stack (e.g., materials at other layers of the stack).Namely, the etchant of the isotropic etch at processing step 510 mayremove some portion of the first dielectric material at each D1 layerwhile preserving (or substantially preserving) other materials (e.g.,materials at other layers, such as the DM layer, D2 layer, or HM layerof the stack). Selective removal of a portion of the first dielectricmaterial from each D1 layer (e.g., layer 315-a and layer 315-b) maycreate a cavity (e.g., cavity 336 or first cavity 415 described withreference to FIG. 3 and FIG. 4) at each D1 layer. As the via holepenetrating the stack may expose sidewalls of both D1 layers (e.g.,315-a and layer 315-b), the isotropic etch may concurrently createcavities at each D1 layer (e.g., layer 315-a and layer 315-b).

Diagram 502 illustrates that processing step 510 concurrently createscavities at both D1 layers (e.g., cavities are concurrently formed atboth layer 315-a and layer 315-b) while the width of the via hole atother layers remains intact. Width 511 may represent a final width ofthe cavities formed in both D1 layers. Additionally, diagram 503 atprocessing step 510 illustrates that cavities formed at the same layerusing adjacent vias may merge, due to the isotropic nature of isotropicetch step expanding the size of each cavity in all directions, forming achannel (e.g., channel 420 described with reference to FIG. 4) withinthe first dielectric material at both D1 layers (e.g., layer 315-a andlayer 315-b). The width of the channel (e.g., width 512) at referenceline B-B as depicted in diagram 503 at processing step 510 may relate tothe overlap regions 425 described with reference to FIG. 4. Width 512may be approximately same as width 511 in some cases. In other cases,width 512 may be less than width 511.

At processing step 515, channels and associated via holes may be filledwith an electrode material, which may be a conductive material. In somecases, excess electrode material may be formed on top of the stack(e.g., on top of HM layer (e.g., layer 310)) and may be removed by anetch-back process or chemical-mechanical polishing process. As usedherein, via holes filled with a material (e.g., a conductive material)may be referred as holes after having been filled with the material.Diagram 503 at processing step 515 illustrates that the electrodematerial may flow into the portions of channels between vias and thusconcurrently fill each channel created at processing step 510.

At processing step 520, an anisotropic etch step may use the vias toremove a portion of the electrode material, creating new via holescorresponding to the vias. The anisotropic etch step may use the samevia pattern of the hardmask layer as processing step 505 (e.g., the viapattern depicted in diagram 501) and create via holes that expose, ateach D1 layer, a sidewall of the electrode material deposited atprocessing step 515 for subsequent processing. At the processing step520, a top-down view of a portion of diagram 501 depicting a single rowof vias may correspond to a top-down view of filled channel 430 asdescribed with reference to FIG. 4.

At processing step 525, an isotropic etch step may selectively removesome portion of the electrode material from each D1 layer—e.g., someportion of the electrode material deposited at processing step 515 andthus filling the channel created at each D1 layer (e.g., layer 315-a andlayer 315-b) at processing step 510. The etchant of isotropic etch atprocessing step 525 may exhibit a selectivity with respect to othermaterials (e.g., materials at other layers of the stack.) Namely, theetchant of isotropic etch at processing step 525 may remove theelectrode material while preserving (or substantially preserving) othermaterials (e.g., materials at other layers, such as the DM layer, D2layer, or HM layer of the stack). Selective removal of the electrodematerial from the cavities at D1 layers (e.g., layer 315-a and layer315-b) may leave a portion of the electrode material in the channel asillustrated in diagram 502 and diagram 503 at processing step 525, andthe remaining portion of the electrode material may form a loop 450 asdescribed in reference to FIG. 4. In other words, width 526 may be lessthan width 511. In some cases, a width (e.g., width 527) of theremaining portion of the electrode material (e.g., a width of accessline comprising the electrode material) may be smaller than a minimumfeature size of a given technology generation, such as a minimum featuresize determined by a minimum width of a line (or a minimum space betweenlines) that may be defined by a photomasking step.

Diagram 503 illustrates that processing step 525 concurrently createscavities at both D1 layers (e.g., cavities are concurrently formed atboth layer 315-a and layer 315-b by selectively removing some portion ofthe electrode material formed at processing step 515) while the width ofthe via hole at other layers remains intact (not shown in diagram 503).Width 526 may represent a final size of the cavities formed in both D1layers. Additionally, diagram 503 at processing step 525 illustratesthat cavities formed at the same layer using adjacent vias may merge(e.g., adjoin), due to the isotropic nature of isotropic etch stepexpanding the size of each cavity in all directions, forming a channel(e.g., channel 440 described with reference to FIG. 4) within theelectrode material at both D1 layers (e.g., layer 315-a and layer315-b). The width of the channel (e.g., width 528) at reference line B-Bas depicted in diagram 503 at processing step 525 may relate to thewidth of channel 440 described with reference to FIG. 4. Width 528 maybe approximately same as width 526 in some cases. In other cases, width528 may be less than width 526.

At processing step 530, the channels at each D1 layer and associated viaholes may be filled with a dielectric material. In some cases, thedielectric material may be the same as the first dielectric material ateach D1 layer. In other cases, the dielectric material may be differentfrom the first dielectric material. As used herein, via holes filledwith a material (e.g., a dielectric material) may be referred to asholes after having been filled with the material. Diagrams 502 and 503at processing step 530 may illustrate that two loops 450 of electrodematerial have been concurrently formed using the same row of vias, afirst loop at a the upper D1 layer (e.g., layer 315-a) and a second loopat the lower D1 layer (e.g., layer 315-b). It is to be understood that,in other examples, the stack may include any number of D1 layers, with aloop 450 of electrode material concurrently formed at each D1 layerusing the processing steps described in reference to FIG. 5. Afterprocessing step 530, a top-down view of a portion of diagram 501depicting a single row of vias may correspond to a top-down view of aportion of the loop 455-a described with reference to FIG. 4.

In some cases, at the completion of processing step 530, a firstelectrode layer (e.g., layer 315 or D1 layer as described with referenceto FIG. 3 or 5) may include a first electrode (e.g., electrode 531-a), asecond electrode (e.g., electrode 531-b), and a dielectric channel(e.g., a dielectric channel that may be formed by filling the channelassociated with width 526 with a dielectric material) that separates thefirst electrode and the second electrode by a first distance (e.g.,width 526). The first distance (e.g., width 526) may be greater than thefirst width (e.g., width 506). Further, the dielectric channel may bealigned with the plurality of holes formed at the top layer (e.g., HMlayer) of the stack, one of which is depicted at HM layer having thefirst width (e.g., width 506). In some cases, the first electrode layermay include an immediately neighboring electrode (not shown) next to thesecond electrode where the second electrode separates the firstelectrode from the immediately neighboring electrode and the secondelectrode is nearer the immediately neighboring electrode than the firstelectrode. For example, as shown in diagram 501, two electrodes formedfrom a single loop (e.g., with a single row of vias interposed betweenthem) may be separated by a different (e.g., greater) distance than thedistance between adjacent loops and thus the distance between twoelectrodes formed from different loops.

FIG. 6 illustrates example methods of forming a 3D cross-point memoryarray structure that may include two or more decks of memory cells inaccordance with the present disclosure. FIG. 6, as an illustrativeexample of fabrication techniques described herein, may show theformation of one set of access lines positioned in-between two decks ofmemory cells-namely, an upper deck and a lower deck may share one set ofbit lines 631-a and 631-b. Bit lines 631 may be examples of bit lines115 common for two decks of memory array 102 as described with referenceto FIG. 1 or a pair of bit lines 115-a, which is common for first deckof memory cells 205-a and second deck of memory cells 205-b as describedwith reference to FIG. 2. The stack of layers in FIG. 6 may correspondto the stack described with reference to FIG. 5 (e.g., stack 305described with reference to FIG. 3).

FIG. 6 also includes diagrams 601, 602, and 603. Diagram 601, as anillustrative example, may depict a top view of a stack that includesthree rows of vias (e.g., vias 335 or vias 410 as described withreference to FIG. 3 or FIG. 4) and six access lines (e.g., bit lines)formed using the rows of vias, with each row of vias used to form oneloop (e.g., loop 460-a described with reference to FIG. 4) (loop endsnot shown in diagram 601) and thus two access lines (e.g., word lines110 or bit lines 115 as described with reference to FIGS. 1 and 2)between which the row of vias is interposed. Diagram 602 illustratescross-sectional side views of the stack corresponding to the center of avia of diagram 601, as denoted by reference line A-A in diagram 601, atvarious stages of processing (e.g., processing steps 605 through 630).Diagram 603 illustrates cross-sectional side views of the stackcorresponding to a space between vias of diagram 601, as denoted byreference line B-B, at various stages of processing (e.g., processingsteps 605 through 630).

At processing step 605, a photolithography step (e.g., photolithographystep described with reference to FIG. 3) may transfer the pattern ofvias illustrated in diagram 601 onto the stack (e.g., stack 305). Insome cases, a plurality of second holes (e.g., holes associated with thepattern of vias illustrated in diagram 601) that each have a secondwidth (e.g., width 606) may be formed at a top layer (e.g., HM layer) ofa stack. The second width (e.g., width 606) may correspond to a width ofvia 335 or 410 as illustrated with reference to FIGS. 3 and 4. In somecases, a subset of vias in diagram 501 and diagram 601 may be common aslater illustrated in FIG. 8. Subsequently, an anisotropic etch step mayremove some materials from the stack creating via holes that penetratethe stack. Diagram 602 at processing step 605 illustrates one of thevias and a corresponding via hole that penetrates the stack and exposesburied layers of the stack to subsequent processing steps. Diagram 603at processing step 605 may illustrate that, between vias, the initialstack (e.g., stack 305) may remain unchanged during processing step 605.Processing step 605 may be an example of processing step 300-b asdescribed with reference to FIG. 3.

At processing step 610, an isotropic etch may selectively remove someportion of the dielectric material at D2 layer in the stack (e.g., layer325) that is exposed to an etchant of the isotropic etch. The dielectricmaterial at D2 layer may be referred to as a second dielectric material.The etchant of isotropic etch at processing step 610 may exhibit aselectivity with respect to other materials of the stack (e.g.,materials at other layers of the stack). Namely, the etchant of theisotropic etch at processing step 610 may remove some portion of thesecond dielectric material at D2 layer while preserving (orsubstantially preserving) other materials (e.g., materials at otherlayers, such as DM layer, D1 layer, or HM layer of the stack). Selectiveremoval of a portion of the second dielectric material from D2 layer(e.g., layer 325) may create a cavity (e.g., cavity 336 or first cavity415 described with reference to FIG. 3 and FIG. 4) at D2 layer.

Diagram 602 illustrates that processing step 610 creates cavities at D2layer (e.g., cavities are formed at layer 325) while the width of thevia hole at other layers remains intact. Width 611 may represent a finalwidth of the cavities formed at D2 layer. Additionally, diagram 603 atprocessing step 610 illustrates that cavities formed at the same layerusing adjacent vias may merge, due to the isotropic nature of isotropicetch step expanding the size of each cavity in all directions, forming achannel (e.g., channel 420 described with reference to FIG. 4) withinthe second dielectric material at D2 layer (e.g., layer 325). The widthof the channel (e.g., width 612) at reference line B-B as depicted indiagram 603 at processing step 610 may relate to the overlap regions 425described with reference to FIG. 4. Width 612 may be approximately sameas width 611 in some cases. In other cases, width 612 may be less thanwidth 611.

At processing step 615, channels and associated via holes may be filledwith an electrode material, which may be a conductive material. In somecases, the electrode material used at processing step 615 may be thesame electrode material used at processing step 515. In some cases,excess electrode material may be formed on top of the stack (e.g., ontop of HM layer (e.g., layer 310)) and may be removed by an etch-backprocess or chemical-mechanical polishing process. As used herein, viaholes filled with a material (e.g., a conductive material) may bereferred as holes after having been filled with the material. Diagram603 at processing step 615 illustrates that the electrode material mayflow into the portions of channels between vias and thus concurrentlyfill each channel created at processing step 610.

At processing step 620, an anisotropic etch may use the vias to remove aportion of the electrode material, creating new via holes correspondingto the vias. The anisotropic etch step may use the same via pattern ofthe hardmask layer as processing step 605 (e.g., the via patterndepicted in diagram 601) and create via holes that expose, at D2 layer,a sidewall of the electrode material deposited at processing step 615for subsequent processing. At the processing step 620, a top-down viewof a portion of diagram 601 depicting a single row of vias maycorrespond to a top-down view of filled channel 430 as described withreference to FIG. 4.

At processing step 625, an isotropic etch may selectively remove someportion of the electrode material from D2 layer—e.g., some portion ofthe electrode material deposited at processing step 615 thus filling thechannel created at D2 layer (e.g., layer 325) at processing step 610.The etchant of isotropic etch at processing step 625 may exhibit aselectivity with respect to other materials (e.g., materials at otherlayers of the stack). Namely, the etchant of isotropic etch atprocessing step 625 may remove the electrode material while preserving(or substantially preserving) other materials (e.g., materials at otherlayers, such as the DM layer, D1 layer, HM layer of the stack).Selective removal of the electrode material from the cavities at D2layer (e.g., layer 325) may leave a portion of the electrode material inthe channel as illustrated in diagram 602 and diagram 603 at processingstep 625, and the remaining portion of the electrode material may form aloop 460 as described with reference to FIG. 4. In other words, width626 may be less than width 611. In some cases, a width (e.g., width 627)of the remaining portion of the electrode material (e.g., a width ofaccess line comprising the electrode material) may be smaller than aminimum feature size of a given technology generation, such as a minimumfeature size determined by a minimum width of a line (or a minimum spacebetween lines) that may be defined by a photomasking step.

Diagram 603 illustrates that processing step 625 creates cavities at D2layer (e.g., cavities are formed at layer 325 by selectively removingsome portion of the electrode material formed at processing step 615)while the width of the via hole at other layers remains intact (notshown in diagram 603). Width 626 may represent a final size of thecavities formed in D2 layer. Additionally, diagram 603 at processingstep 625 illustrates that cavities formed at the same layer usingadjacent vias may merge (e.g., adjoin), due to the isotropic nature ofisotropic etch step expanding the size of each cavity in all directions,forming a channel (e.g., channel 440 described with reference to FIG. 4)within the electrode material at D2 layer (e.g., layer 325). The widthof the channel (e.g., width 628) at reference line B-B as depicted indiagram 603 at processing step 625 may relate to the width of channel440 described with reference to FIG. 4. Width 628 may be approximatelysame as width 626 in some cases. In other cases, width 628 may be lessthan width 626.

At processing step 630, the channels at D2 layer and associated viaholes may be filled with a dielectric material. In some cases, thedielectric material may be the same as the second dielectric material atD2 layer. In other cases, the dielectric material may be different fromthe first dielectric material. As used herein, via holes filled with amaterial (e.g., a dielectric material) may be referred to as holes afterhaving been filled with the material. Diagrams 602 and 603 at processingstep 630 may illustrate that one loop 460 of electrode material has beenformed using the row of vias (e.g., vias depicted in diagram 601). it isto be understood that, in other examples, the stack may include anynumber of D2 layers, with a loop 460 of electrode material concurrentlyformed at each D2 layer using the processing steps described inreference to FIG. 6. After processing step 630, a top-down view of aportion of diagram 601 depicting a single row of vias may correspond toa top-down view of the loop 460-a described with reference to FIG. 4.

In some cases, at the completion of processing step 630, a secondelectrode layer (e.g., layer 325 or D2 layer as described with referenceto FIG. 3 or 6) may include a third electrode (e.g., electrode 631-a), afourth electrode (e.g., electrode 631-b), and a second dielectricchannel (e.g., a dielectric channel that may be formed by filling thechannel associated with width 626 with a dielectric material) thatseparates the third electrode and the fourth electrode by a seconddistance (e.g., width 626). The second distance (e.g., width 626) may begreater than the second width (e.g., width 606). Further, the seconddielectric channel may be aligned with the plurality of second holesformed at the top layer (e.g., HM layer) of the stack, one of which isdepicted at HM layer having the second width (e.g., width 606). In somecases, the second electrode layer may include an immediately neighboringelectrode (not shown) next to the fourth electrode where the fourthelectrode separates the third electrode from the immediately neighboringelectrode and the fourth electrode is nearer the immediately neighboringelectrode than the third electrode. For example, as shown in diagram601, two electrodes formed from a single loop (e.g., with a single rowof vias interposed between them) may be separated by a different (e.g.,greater) distance than the distance between adjacent loops and thus thedistance between two electrodes formed from different loops.

In some cases, an apparatus that includes a 3D cross-point memory array(e.g., a 3D cross-point memory array that may be built using thefabrication techniques described with reference to FIGS. 5 and 6) mayinclude an upper layer of a stack, the upper layer comprising aplurality of holes that each have a first width, a first electrode layerwithin the stack, the first electrode layer comprising a first electrodeand a second electrode, and a dielectric channel aligned with theplurality of holes and separating the first electrode from the secondelectrode by a first distance that is greater than the first width. Insome examples of the apparatus described above, the first electrode hasat least one dimension smaller than a minimum feature size. In someexamples of the apparatus described above, the upper layer comprises ahardmask material. In some examples of the apparatus described above, aconformal liner (e.g., a conformal liner described with reference toFIG. 7) in contact with a plurality of surfaces of the first electrode.

In some cases, the apparatus described above may further include amemory layer within the stack, the memory layer comprising a sheet ofmemory material perforated by a plurality of dielectric plugs.

In some cases, the apparatus described above may further include asecond electrode layer within the stack, the second electrode layercomprising a third electrode and a fourth electrode, and a memory layerwithin the stack, the memory layer comprising a memory material elementthat is coupled with the first electrode, the second electrode, and thethird electrode. In some examples of the apparatus described above, thememory material element is coupled with the fourth electrode.

In some cases, the apparatus described above may further include amemory layer within the stack, the memory layer comprising a pluralityof memory material elements, each memory material element having acurved surface.

In some cases, the apparatus described above may further include aplurality of second holes in the upper layer, each second hole having asecond width, a second electrode layer within the stack, the secondelectrode layer comprising a third electrode and a fourth electrode, anda second dielectric channel aligned with the plurality of second holesand separating the third electrode from the fourth electrode by a seconddistance that is greater than the second width. In some examples of theapparatus described above, the first electrode and the second electrodeare disposed in a first direction, and the third electrode and thefourth electrode are disposed in a second direction. In some cases, theapparatus described above may further include an immediately neighboringelectrode at the first electrode layer, in which the second electrodeseparates the first electrode from the immediately neighboringelectrode, and the second electrode is nearer the immediatelyneighboring electrode than the first electrode.

FIG. 7 illustrates example methods of forming a 3D cross-point memoryarray structure that may include two or more decks of memory cells inaccordance with the present disclosure. FIG. 7, as an illustrativeexample of fabrication techniques described herein, may show a method offorming a bi-layer electrode (e.g., a bi-layer access line). Someaspects of the methods illustrated in FIG. 7 may be similar tocorresponding aspects of FIG. 5. For example, in some cases, processingstep 705, processing step 710, processing step 715, and processing step730 may be same as processing step 505, processing step 510, processingstep 515, and processing step 530 described with reference to FIG. 5,respectively.

As illustrated in processing step 712, a first electrode material (EM1)may be formed on surfaces exposed as a result of step 710 (e.g., on thesurface of the channels and via holes generated at processing step 710).In some cases, EM1 may be formed as a conformal liner on the surfaceexposed as a result of step 710. In some cases, EM1 may be acarbon-based material. At processing step 715, a second electrodematerial (EM2) may fill the remaining volume of channels and via holes,as described with reference to processing step 515. In some cases, EM2may be the same electrode material described with reference to FIGS. 5and 6. As used herein, via holes filled with a material (e.g., abi-layer material comprising the first electrode material and the secondelectrode material) may be referred as holes after having been filledwith the material. Hence, a conformal liner (e.g., a carbon-basedelectrode material) may be interposed between a first dielectricmaterial (e.g., a first dielectric material at layers 315 (e.g., D1layers)) and the second electrode material (e.g., EM2). In some cases, aconformal liner (e.g., a carbon-based electrode material) may be incontact with a plurality of surface of the first electrode (e.g., theelectrode comprising EM2).

Subsequently, an anisotropic etch step included in processing step 720may remove both EM1 material and EM2 material. The anisotropic etch atprocessing step 720 may be a variation of the anisotropic etch step inprocessing step 520 (or processing step 620), as processing step 720 mayremove both EM1 material and EM2 material whereas processing step 520may remove EM2 material only. In addition, an isotropic etch stepincluded in processing step 725 may remove both EM1 material and EM2material. The isotropic etch at processing step 725 may be a variationof the isotropic etch step in processing step 525 (or processing step625), as processing step 725 may remove both EMI material and EM2material whereas processing step 525 may remove EM2 material only.

Diagram 702 and diagram 703 illustrate that processing step 712 mayresult in EM1 material being interposed between EM2 material and the DMlayer at all locations where EM2 material in a D1 layer would otherwisebe in contact with the DM layer. In some cases, the EM1 material (e.g.,a carbon-based material) may function as a buffer layer between the EM2material (e.g., a tungsten-based material) and the material of each DMlayer (e.g., a chalcogenide material 220 described with reference toFIG. 2 or a placeholder dielectric material that may subsequently be atleast partially replaced with a memory material). In some cases, eachmemory material element—such as a memory material element comprising amemory material (e.g., chalcogenide material 220) at the DM layer or amemory material element comprising a memory material (e.g., chalcogenidematerial 220) subsequently formed by partially replacing a placeholderdielectric material at the DM layer—may be coupled with the at least onefirst electrode through a conformal liner that may be in contact withthree surfaces of the at least one first electrode.

Though the processing steps of FIG. 7 have been illustrated anddescribed as modifying the processing steps described with reference toFIG. 5, it is to be understood that the processing steps of FIG. 6 maybe similarly modified (not shown) to form access lines comprisingbi-layer electrodes (e.g., a bi-layer access line) at each D2 layer aswell. As such, both the upper surface and the lower surface of materialat the DM layer may interface with EMI material instead of EM2material-thus, a memory cell at an DM layer may interface with twobi-layer electrodes (e.g., a word line 110 and a bit line 115). In somecases, only one access line (e.g., word line 110 or bit line 115) for amemory cell may include a bi-layer electrode such that an asymmetricelectrode configuration between two access lines may facilitate anasymmetric operation of a memory cell.

FIG. 8 illustrates exemplary via patterns and structures that support across-point memory array and related fabrication techniques inaccordance with the present disclosure. The fabrication techniques maybe used to form a 3D cross-point memory array structure that may includetwo or more decks of memory cells. FIG. 8, as an illustrative example offabrication techniques described herein, includes diagram 801 anddiagram 802, and each diagram may represent a top-down view of a layoutof a portion of a 3D cross-point memory array.

Diagram 801 includes layouts 805, 810, 815, and 820. Layout 805 is acomposite plot depicting a pattern of vias, a set of first access lines,and a set of second access lines. Layout 805, as an illustrativeexample, may depict 16 memory cells in a single deck of memoryarray—e.g., one memory cell located at each of the 16 cross-pointsbetween the four first access lines and the four second access lines.

Layout 810 illustrates a subset of the elements of the layout 805, whichincludes two sets of first vias, each set of first vias arranged in arow in a first direction (e.g., on the page, a horizontal direction orx-direction), and four first access lines that extend in the firstdirection. In some cases, the first access lines may be of a conductivematerial (e.g., electrode material as described with reference to FIGS.1 and 2) and may be examples of word lines (e.g., word lines 110 asdescribed with reference to FIGS. 1 and 2). The four first access linesmay represent portions (e.g., the longer sides) of two loops ofelectrode material with the ends (e.g., the shorter sides) removed, andeach loop of electrode material may have been formed using the set offirst vias surrounded by the loop of electrode material. Thus, layout810 illustrates a set of four first access lines formed using two setsof first vias, each set of first vias arranged in a row in the firstdirection, for example. Further, using layout 810, sets of four firstaccess lines may be concurrently formed in any number of first layers(e.g., layers initially comprising a first dielectric material, such aslayer 315-a, layer 315-b) of a composite stack (e.g., stack 305-a) asdescribed with reference to FIG. 3.

Similarly, layout 815 illustrates another subset of the elements of thelayout 805, which includes two sets of second vias, each set of secondvias arranged in a row in a second direction (e.g., on the page, avertical direction or y-direction) and four second access lines thatextend in the second direction. In some cases, the second access linesmay be of a conductive material (e.g., electrode material as describedwith reference to FIGS. 1 and 2) and may be examples of bit lines (e.g.,bit lines 115 as described with reference to FIGS. 1 and 2). The foursecond access lines may represent portions (e.g., the longer sides) oftwo loops of electrode material with the ends (e.g., the shorter sides)removed, and each loop of electrode material may have been formed usingthe set of second vias surrounded by the loop of electrode material.Thus, layout 815 illustrates a set of four second access lines formedusing two sets of second vias, each set of second vias arranged in a rowin the second direction, for example. Further, using layout 815, sets offour second access lines may be concurrently formed in any number ofsecond layers (e.g., layers initially comprising a second dielectricmaterial, such as layer 325) of a composite stack (e.g., stack 305-a) asdescribed with reference to FIG. 3.

Layout 820 illustrates another subset of the elements of the layout 805,which includes the four first access lines in the first direction (e.g.,a horizontal direction or x-direction) and the four second access linesin the second direction (e.g., a vertical direction or y-direction). Amemory component may be disposed at each location where a first accessline and a second access line topologically intersect each other. Asdescribed above, one or more sets of the first access lines (e.g., wordlines) may be formed in one or more first layers of a composite stack,and one or more sets of the second access lines (e.g., bit lines) may beformed in one or more second layers of the composite stack. Thus, layout820 may be a representation of a 3D cross-point array of memory cells inwhich each deck of memory cells comprises four word lines, four bitlines, and sixteen memory cells.

Layout 820 also illustrates a unit cell 840. In the context of memorytechnology, unit cell may refer to a single memory cell including acomplete set of its constituents (e.g., word line, bit line, selectioncomponent, memory component). Repetitions of a unit cell of memory maybuild any size of an array of memory cells. In addition, layout 820illustrates cell area 841. In the context of cross-point memoryarchitecture, cell area 841 may refer to an area corresponding to anarea of topological intersection of access lines (e.g., a word line anda bit line). In other words, a width of word line multiplied by a widthof bit line may define cell area 841.

In some cases, as illustrated in layout 820, an electrode layer—namely,a first electrode layer at which a set of first access lines (e.g.,access line comprising an electrode material) may be formed—may includea plurality of first electrodes. In some cases, separation distancesbetween first electrodes (e.g., distances 842) within the plurality offirst electrodes may be non-uniform. In some cases, an immediatelyneighboring electrode (e.g., access line 843-a) may be present next toan electrode (e.g., access line 843-b) where the electrode (e.g., accessline 843-b) separates other electrode (e.g., access line 843-c) from theimmediately neighboring electrode (e.g., access line 843-a) and theelectrode (e.g., access line 843-b) may be nearer the immediatelyneighboring electrode (e.g., access line 843-a) than the other electrode(e.g., access line 843-c).

Further, it is to be understood that a subset of vias may be commonbetween a set of first vias arranged in a row in the horizontaldirection (x-direction) and a set of second vias arranged in a row inthe vertical direction (y-direction)—that is, one or more vias may beincluded in both a horizontal row of first vias and a vertical row ofsecond vias. Such vias may be referred to as common vias (e.g., commonvia 830). Common vias 830 may be used both for forming a set of firstaccess lines and for forming a set of second access lines. In otherwords, processing steps forming the first access lines (e.g., wordlines) and processing steps forming the second access lines (e.g., bitlines) may both use the common vias 830. In other words, the common vias830 may be subject to the processing steps 505 through 530 andprocessing steps 605 through 630 as described with reference to FIGS. 5and 6. In contrast, other vias may be used to form either the firstaccess lines (e.g., processing steps 505 through 530 to form word lines)or the second access lines (e.g., processing steps 605 through 630 toform bit lines), but not both. Such vias may be referred to as uncommonvias (e.g., uncommon vias 835). Sizes of vias, distances between vias,and sizes of cavities associated with vias may vary to achieve variouslayouts of a memory array—e.g., layout 805 and layout 845.

Diagram 802 illustrates a variation of layout 805 as an example ofachieving a different layout of memory array by modifying a dimensionassociated with vias (e.g., a size of via, a distance between vias, asize of cavity associated with a via, etc.). Diagram 802 includeslayouts 845, 850, 855, and 860. Layout 845 is a composite plot depictinga pattern of vias, a set of first access lines, and a set of secondaccess lines. Layout 845, as an illustrative example similar to layout805, may depict 16 memory cells in a single deck of memory array—e.g.,one memory cell located at each of the 16 cross-points between the fourfirst access lines and the four second access lines.

A difference between layout 845 and layout 805 may be that vias may besquare or rectangular in layout 845. In some cases, layout 845 may havecommon vias that are square and uncommon vias that are rectangular. As aresult of the difference, layout 860 (e.g., when compared to the layout820) illustrates uniformly distributed access lines and a constantdistance between active cell areas. Layout 860 also illustrates a unitcell 880, and the area of unit cell 880 may be greater than the area ofunit cell 840. In addition, layout 860 illustrates cell area 881, andthe area of cell area 881 may correspond to the area of cell area 841 ifwidths of access lines remain unchanged between layout 845 and layout805. In some cases, more uniformly distributed access lines andtherefore more uniform distances between active cell areas mayfacilitate more efficient operation of a memory array, whereasnon-uniformly distributed access lines and therefore non-uniformdistances between active cell areas may facilitate greater memory celldensity within a memory array. These and other benefits and tradeoffsmay be apparent to one of ordinary skill in the art.

FIGS. 9 through 12 illustrate various aspects of constructing memorymaterial elements in accordance with fabrication techniques of thepresent disclosure, which may be used for example, to make a 3D memoryarray such as the examples of memory array 102 illustrated in FIG. 1 andmemory array 202 illustrated in FIG. 2. The fabrication techniquesdescribed herein may include using a single pattern of vias in a top(e.g., exposed) layer of a composite stack to form one or more memorymaterial elements in one or more lower (e.g., buried) layers of thecomposite stack. As used herein, a via may refer to an opening that hasbeen later filled with a material that may not be conductive. In somecases, such lower layers in which the memory material elements areformed may be referred to as memory layers—e.g., DM layers as describedwith reference to FIGS. 5 and 6. In some embodiments, DM layers (e.g.,layer 320-a and layer 320-b) may initially include a memory material(e.g., chalcogenide material 220). In other embodiments, DM layers(e.g., layer 320-a and layer 320-b) may initially include a placeholdermaterial (e.g., a third dielectric material as described with referenceto FIG. 5).

FIG. 9 illustrates an example of a 3D cross-point memory array structure905 that may include two or more decks of memory cells and may be formedin accordance with the fabrication techniques of the present disclosure.Array structure 905 may comprise two decks of memory cells (e.g., anupper deck 945-a and a lower deck 945-b). The two decks of memory cellscollectively include two sets of first access lines (e.g., upper deck945-a includes one set of word lines 910-a and 910-b, and lower deck945-b includes another set of word lines 910-c and 910-d) that may beconcurrently formed, two memory layers of memory materials (e.g., memorylayers 920-a and 920-b) that may be concurrently formed, and one set ofsecond access lines (e.g., bit lines 915) that is common for both decksof memory cells. First access lines (e.g., word lines 910) may extend ina first direction (e.g., x-direction) while second access lines (e.g.,bit lines 915) may extend in a second, different direction (e.g.,z-direction). Each first access lines of the set of first access lines(e.g., word lines 910) may be parallel to each other first access lineof the set of first access lines, and each second access lines of theset of second access lines (e.g., bit lines 915) may be parallel to eachother second access line of the set of second access lines. The firstaccess lines (e.g., word lines 910) may be substantially orthogonal tothe second access lines (e.g., bit lines 915) as depicted in the arraystructure 905.

The upper deck 945-a may include word lines 910-a and 910-b, memorylayer 920-a, and bit lines 915, and the lower deck 945-b may includeword lines 910-c and 910-d, memory layer 920-b, and bit lines 915. Thus,bit lines 915 may be common to upper deck 945-a and lower deck 945-b inthe array structure 905. Further, the word lines 910 may be examples ofthe first conductive lines formed in the first electrode layers (e.g.,layer 315-a and layer 315-b as described with reference to FIG. 3, D1layer as described with reference to FIGS. 5-7). Similarly, the bitlines 915 may be examples of the second conductive lines formed in thesecond electrode layer (e.g., layer 325 as described with reference toFIG. 3, D2 layer as described with reference to FIGS. 5-7). Lastly, thememory layers 920 may be examples of the memory layers (e.g., layer320-a and layer 320-b as described with reference to FIG. 3, DM layer asdescribed with reference to FIGS. 5-7). Hence, the upper deck 945-a maycorrespond to an upper deck of memory cells formed in a first subset ofthe composite stack 305-a comprising layer 315-a, layer 320-a, and layer325 while the lower deck 945-b may correspond to a lower deck of memorycells formed in a second subset of the composite stack 305-a comprisinglayer 325, layer 320-b, and layer 315-b.

The array structure 905 shows horizontal (x- or z-direction) spacesbetween structures within a layer (e.g., a space between word line 910-aand word line 910-b within a first electrode layer), which may be filledwith a dielectric material. The array structure 905 also shows vertical(y-direction) spaces between layers—e.g., a space between the memorylayer 920-a and the first electrode layer including word lines 910-a and910-b—for illustration purposes only. Such vertical spaces shown in thearray structure 905 may not exist in actual embodiments. In some cases,a portion of an interface between the memory layer and the electrodelayer may include other materials, such as an additional electrodematerial (e.g., carbon) as describe with reference to FIG. 7.

The array structure 905 includes two memory layers 920-a and 920-b, afirst memory layer 920-a included in upper deck 945-a and a secondmemory layer 920-b included in lower deck 945-b. An initial stack oflayers (e.g., stack 305-a described with reference to FIG. 3) mayinclude one or more memory layers 920, which may each comprise a sheetof memory material (e.g., chalcogenide material 220). Including one ormore memory layers as a part of an initial stack may provide benefits interms of reduced manufacturing time and costs, due to fewer processingsteps associated with fabricating the array structure 905. In somecases, the processing steps described with reference to FIGS. 5 and 6may be used to build the array structure 905, and may result in eachmemory layer comprising a sheet of memory material perforated by aplurality of dielectric plugs (e.g., dielectric plugs 930). Thedielectric plugs that perforate the sheets of memory material mayresult, for example, from processing steps 530 and 630 as described withreference to FIGS. 5 and 6.

FIG. 9 includes a diagram 906 that illustrates memory layer 920-c inisolation, which comprises a sheet of memory material perforated by aplurality of dielectric plugs (e.g., dielectric plugs 930-c through930-e). Some portions of memory layer 920-c may comprise memory cells105 and may operate in conjunction with the first access lines and thesecond access lines. Such portions of memory layer 920-c may be referredto as cell areas 925 (e.g., cell area 925-a) and may be located wherefirst access lines (e.g., word line 910-a) and second access lines(e.g., bit line 915-a) topologically intersect. The cell areas 925 maycorrespond to cross-points 465 (e.g., an area of a cross-pointassociated with widths of access lines) as described with reference toFIG. 4. In addition, the cell area 925 may be an example of cell area841 or cell area 881 as described with reference to FIG. 8.

Further, the cell area 925 and the thickness of a memory layer 920(e.g., thickness of a sheet of memory material perforated by a pluralityof dielectric plugs) may define a cell volume 926. Cell volume 926 mayrefer to a volume of memory material that functions as a memory cell 105(e.g., as a portion of memory material configured to store a logicstate). In some cases, the memory material may include differentcrystallographic phases, and different crystallographic phases maycorrespond to different logical states. In other cases, the memorymaterial may include different local compositions, and different localcompositions may correspond to different logical states. In some cases,electrical operations associated with access lines (e.g., a voltagedifference between a word line and a bit line) may alter thecrystallographic phase of the memory material (or the local compositionof the memory material) included in a cell volume 926 without alteringremaining portions of the memory layer 920 (e.g., a sheet of memorymaterial perforated by a plurality of dielectric plugs). Such electricaldelineation between the memory material included in a cell volume 926and the remaining portions of the memory layer may be referred to aselectrical confinement of an active cell volume. In some cases, the cellvolume 926 of a memory cell 105 may be referred to as the active cellvolume of the memory cell 105.

FIG. 9 also illustrates a top-down view diagram 907 of memory layer920-d (e.g., a sheet of memory material perforated by a plurality ofdielectric plugs) in isolation. The memory layer 920-d may be an exampleof memory layer 920-a through 920-c. The memory layer 920-d may bepositioned in a plane defined by the x-axis and z-axis. The memory layer920-d may include a pattern of dielectric plugs corresponding to apattern of vias. The pattern of dielectric plugs may, for example,correspond to the pattern of vias depicted in layout 805.

In some cases, a first subset of vias may have been used to generate oneor more sets of first access lines (e.g., word lines 910) and left thefirst subset of dielectric plugs arranged in a row in a horizontaldirection (e.g., x-direction in a x-z plane defined by the x-axis andz-axis). Additionally, a second subset of vias may have been used togenerate one or more sets of second access lines (e.g., bit lines 915)and left the second subset of dielectric plugs arranged in a row in avertical direction (e.g., z-direction in a x-z plane defined by thex-axis and z-axis). For example, the first subset of dielectric plugsmay result from processing step 530 as described in reference FIG. 5,and the second subset of dielectric plugs may result from processingstep 630 as described in reference to FIG. 6. Thus, in some cases, afirst subset of dielectric plugs arranged in a row in a horizontaldirection (e.g., corresponding via holes disposed in a first linearconfiguration having a first direction) may comprise a first dielectricmaterial, and a second subset of dielectric plugs arranged in a row in avertical direction (e.g., corresponding via holes disposed in a secondlinear configuration having a second direction that intersects the firstdirection) may comprise a second dielectric material. In some cases, adielectric plug (e.g., dielectric plug 930-e, which is illustrated indiagram 907, like other common dielectric plugs, as a dark-shadeddielectric plug) may be common to the rows of dielectric plugs (e.g.,the first subset of dielectric plugs and the second subset of dielectricplugs).

In some cases, sizes of vias and distances between vias may vary toachieve various memory array configurations (e.g., layout 805 or layout845 described with reference to FIG. 8). As such, a pattern ofdielectric plugs in one or more memory layers 920, each comprising asheet of memory material, may vary such that the sheet of memorymaterial may be perforated by a plurality of dielectric plugs havingvarious sizes and distances between the dielectric plugs.

FIG. 10 illustrates an example of a 3D cross-point memory arraystructure 1005 that may include two or more decks of memory cells andmay be formed in accordance with the fabrication techniques of thepresent disclosure. Array structure 1005 may comprise two decks ofmemory cells (e.g., an upper deck 1060-a and a lower deck 1060-b). Thetwo decks of memory cells collectively include two set of first accesslines (e.g., upper deck 1060-a includes one set of word lines 1010-a and1010-b, and lower deck 1060-b includes another set of word lines 1010-cand 1010-d included in) that may be concurrently formed, two memorylayer of memory material (e.g., memory layers 1020-a and 1020-b) thatmay be concurrently formed, and one set of second access lines (e.g.,bit lines 1015) that is common for both decks of memory cells. Firstaccess lines (e.g., word lines 1010) may extend in a first direction(e.g., x-direction) while second access lines (e.g., bit lines 1015) mayextend in a second, different direction (e.g., z-direction). Each firstaccess lines of the set of first access lines (e.g., word lines 1010)may be parallel to each other first access line of the set of firstaccess lines, and each second access lines of the set of second accesslines (e.g., bit lines 1015) may be parallel to each other second accessline of the set of second access lines. The first access lines (e.g.,word lines 1010) may be substantially orthogonal to the second accesslines (e.g., bit lines 1015) as depicted in the array structure 1005.

The upper deck 1060-a may include word lines 1010-a and 1010-b, memorylayer 1020-a, and bit lines 1115, and the lower deck 1060-b may includeword lines 1010-c and 1010-d, memory layer 1020-b, and bit lines 1015.Thus, bit lines 1015 may be common to upper deck 1060-a and lower deck1060-b in the array structure 1005. Further, the word lines 1010 may beexamples of the first conductive lines formed in the first electrodelayers (e.g., e.g., layer 315-a and layer 315-b as described withreference to FIG. 3, D1 layer as described with reference to FIGS. 5-7).Similarly, the bit lines 1015 may be examples of the second conductivelines formed in the second electrode layer (e.g., layer 325 as describedwith reference to FIG. 3, D2 layer as described with reference to FIGS.5-7). Lastly, each of memory layers 1020 comprising memory materialelements (e.g., memory layer 1020-a comprising memory material element1035-a, memory layer 1020-b comprising memory material element 1035-b)may be an example of the memory layers (e.g., layer 320-a and layer320-b as described with reference to FIG. 3, DM layer as described withreference to FIGS. 5-7). Hence, the upper deck 1060-a may correspond toan upper deck of memory cells formed in a first subset of the compositestack 305-a comprising layer 315-a, layer 320-a, and layer 325 while thelower deck 1060-b may correspond to a lower deck of memory cells formedin a second subset of the composite stack 305-a comprising layer 325,layer 320-b, and layer 315-b

The array structure 1005 shows horizontal (x- or z-direction) spacesbetween structures within a layer (e.g., a space between word line1010-a and word line 1010-b within a first electrode layer), which maybe filled with a dielectric material. The array structure 1005 alsoshows vertical (y-direction) spaces between layers—e.g., a space betweenthe memory layer 1020-a and the first electrode layer including wordlines 1010-a and 1010-b—for illustration purposes only. Such verticalspaces shown in the array structure 1005 may not exist in actualembodiments. In some cases, a portion of an interface between the memorylayer and the electrode layer may include other materials, such as anadditional electrode material (e.g., carbon) as describe with referenceto FIG. 7.

The array structure 1005 includes two memory layers 1020-a and 1020-b, afirst memory layer 1020-a included in upper deck 1060-a and a secondmemory layer 1020-b included in lower deck 1060-b. An initial stack oflayers (e.g., stack 305-a described with reference to FIG. 3) mayinclude one or more memory layers 1020, which may each comprise a sheetof memory material (e.g., chalcogenide material 220). In some cases,each memory layer 1020 may include a plurality of memory materialelements 1035, each memory material element 1035 in a 3D rectangularshape as illustrated in diagram 1006.

FIG. 10 includes a diagram 1006 that illustrates a memory layer 1020 inisolation, which includes four 3D rectangular-shaped memory materialelements (e.g., 1035-c through 1035-f). It is to be understood that amemory layer 1020 may include any number of memory material elements1035. 3D rectangular-shaped memory material elements 1035-c and 1035-dof diagram 1006 may correspond to two 3D rectangular-shaped memorymaterial elements depicted in memory layer 1020-a of array structure1005. Further, the plurality of memory material elements 1035 depictedin diagram 1006 may have at some time been a part of a single sheet ofmemory material included in a composite stack.

Some portions of each 3D rectangular-shaped memory material element 1035may comprise memory cells 105 and may operate in conjunction with thefirst access lines and the second access lines. Such portions of memorymaterial elements 1035 may be referred to as cell areas 1025 (e.g., cellarea 1025-a of upper deck 1060-a) and may be located within a memorylayer 1020 where first access lines (e.g., word line 1010-a) and secondaccess lines (e.g., bit line 1015-a) topologically intersect. The cellareas 1025 may correspond to cross-points 465 (e.g., an area of thecross-point associated with widths of access lines) as described withreference to FIG. 4. In addition, the cell area 1025 may be an exampleof cell area 841 or cell area 881 described with reference to FIG. 8.

Further, the cell area 1025 and the thickness of a memory layer 1020(e.g., thickness of 3D rectangular-shaped memory material element1035-a) may define a cell volume 1026. Cell volume 1026 may refer to avolume of memory material that functions as a memory cell 105 (e.g., asa portion of memory material configured to store a logic state). In somecases, the memory material may include different crystallographicphases, and different crystallographic phases may correspond todifferent logical states. In other cases, the memory material mayinclude different local compositions, and different local compositionsmay correspond to different logical states. In some cases, electricaloperations associated with access lines (e.g., a voltage differencebetween a word line and a bit line) may alter the crystallographic phaseof the memory material (or the local composition of the memory material)included in a cell volume 1026 without altering remaining portions ofthe memory material element 1035. Such electrical delineation betweenthe memory material included in a cell volume 1026 and the remainingportions of the memory material element 1035 may be referred to aselectrical confinement of an active cell volume. In some cases, the cellvolume 1026 of a memory cell 105 may be referred to as the active cellvolume of the memory cell 105.

In addition, one or more physical separations (e.g., channel 1036-a or1036-b filled with a dielectric material as illustrated in diagram1006), which separate each 3D rectangular-shaped memory material elementfrom each other, may also define the cell volume 1026 and providephysical separation on at least two surfaces of a memory cell 105 (e.g.,two surfaces of a cell volume 1026). In some case, such physicalseparation may be referred to a physical confinement of an active cellvolume—e.g., in contrast to electrical confinement of an active cellvolume.

In an illustrative example of cell volume 1026, each cell volume 1026includes two interfaces defined by electrical confinement and anothertwo interfaces defined by physical confinement. In some cases, a memorycell 105 comprising a memory material defined by physical confinement ofactive cell volume may be less prone to various undesirable phenomena(e.g., disturbs) during memory cell operations. For example, a memorycell 105 of the array structure 1005 includes an active cell volumedefined by two interfaces of physical confinement and two interfaces ofelectrical confinement. In contrast, a memory cell 105 of the arraystructure 905 includes an active cell volume defined by four interfacesof electrical confinement. Thus, a memory cell 105 of the arraystructure 1005 may be less prone to the undesirable phenomena than amemory cell 105 of the array structure 905.

FIG. 10 also illustrates a top view of a layout 1007. The layout 1007may be an example of layout 845 described with reference to FIG. 8, andmay illustrate how a pattern of vias may concurrently form one or more3D rectangular-shaped memory material elements 1035 within each ofmultiple memory layers (e.g., layer 320-a, layer 320-b described withreference to FIG. 3) included in a stack. As illustrated with referenceto FIG. 4A, a set of vias arranged in a row may be used to form achannel (e.g., channel 420) in a target material at a target layer.Forming such a channel (e.g., channel 420) at a target layer may sever(e.g., divide, separate) a target material at the target layer into twodistinct sections of the target material. Similarly, forming multiplechannels at a target layer may sever a target material at the targetlayer into more than two distinct sections of target material.

In the illustrative example using the layout 1007, one or more sets offirst vias, each set of first vias (e.g., vias 1040-a through 1040-e)arranged in a row in a horizontal direction (e.g., the first vias may belinearly disposed in x-direction) may be formed at a top layer (e.g.,layer 310) of a composite stack (e.g., stack 305-a) that includes asheet of memory material at a memory layer (e.g., layer 320-a). Inaddition, one or more sets of second vias, each set of second vias(e.g., via 1040-a and vias 1040-f through 1040-i) arranged in a row in avertical direction (e.g., the second vias may be linearly disposed inz-direction) may be formed at the top layer of the composite stack.

The sets of first vias may be used to form a group of first channels inthe horizontal direction (x-direction) in the memory material at thememory layer in which each first channel is aligned with a set of firstvias. In addition, the sets of second vias may be used to form a groupof second channels in the vertical direction (z-direction) in the memorymaterial at the same memory layer such that each second channel mayintersect the group of first channels. Each of the first channels andeach of the second channels may be filled with a dielectric material(e.g., channel 1036-a or 1036-b filled with a dielectric material asillustrated in diagram 1006). Forming the first channels (e.g.,extending in x-direction) filled with a dielectric material at thememory layer may divide (e.g., separate, sever) a sheet of memorymaterial at the memory layer (e.g., layer 320-a) into a first pluralityof discrete sections (e.g., horizontal stripes extending in x-direction)of memory material at the memory layer. In addition, forming the secondchannels (e.g., extending in z-direction) filled with a dielectricmaterial at the memory layer may further divide (e.g., separate, sever)each of the first plurality of discrete sections into a second pluralityof discrete sub-sections of memory material (e.g., rectangles 1045-athrough 1045-d of layout 1007) at the memory layer. The rectangles ofmemory material (e.g., rectangles 1045-a through 1045-d of layout 1007)may correspond to the 3D rectangular-shaped memory material elements1035 (e.g., memory material elements 1035-c through 1035-f of diagram1006).

Thus, two sets of vias—e.g., the sets of first vias and the sets ofsecond vias—may be used to concurrently divide a 3D sheet of memorymaterial at one or more memory layers (e.g., layer 320-a, layer 320-b)within a stack of layers (e.g., stack 305-a) into a plurality of 3Drectangular-shaped memory material elements within each of the memorylayers.

In some cases, a top layer (e.g., layer 310) of a stack (e.g., stack305-a) may include a pattern of vias including both the sets of firstvias and the sets of second vias, hence forming a set of vias in atwo-dimensional matrix, as a result of a photolithography step and ananisotropic etch step creating the 2D matrix pattern of vias in the toplayer. In some cases, the top layer may include a hardmask material,which may retain the pattern of vias (e.g., the vias in the 2D matrix)throughout various processing steps as described with FIGS. 3 through 7.As such, processing steps for forming a channel may simultaneously formchannels (e.g., channel 1036-a or 1036-b filled with a dielectricmaterial) in both directions (e.g., horizontal and vertical direction,namely x-direction and z-direction) and may produce a plurality of 3Drectangular-shaped memory materials simultaneously.

It should be appreciated that the same set of vias (e.g., the sets offirst vias and the sets of second vias) used to form the plurality ofrectangular-shaped memory material elements (e.g., memory materialelements 1035 of diagram 1006, memory material elements 1045 of layout1007) may also be used to form sets of access lines (e.g., word lines1010 and bit lines 1015) at electrode layers as described, for example,with reference to layout 850 and layout 855 of FIG. 8. For example, theset of first vias arranged in a row in a horizontal direction (e.g.,vias 1040-a through 1040-e linearly disposed in x-direction) may be usedto form a first number of channels filled with a dielectric material ata memory layer comprising a sheet of memory material (e.g., memory layer320-a) and to form a first number of loops of electrode material at anelectrode layer (e.g., electrode layer 315-a or electrode layer 315-b)to form first access lines (e.g., word lines 1010).

Further, each rectangular-shaped memory material element of layout 1007(e.g., memory material element 1045-a through 1045-d) may include fourcorner regions (e.g., region 1050-a) where a word line (e.g., 1010-e)and a bit line (e.g., 1015-b) topologically intersect, and the portionof the memory material element at the topological intersection may beconfigured to function as a memory cell 105. Hence, the areacorresponding to the intersecting access lines (e.g., word line 1010-eand bit line 1015-b) of the corner region of each rectangular-shapedmemory material elements of layout 1007 (e.g., memory material element1045-b) may be equivalent to cell areas 1025 of array structure 1005. Inother words, each rectangular-shaped memory material element may supportfour memory cells 105. In addition, each rectangular-shaped memorymaterial element (e.g., memory material element 1045-b) may be coupledwith four electrodes—e.g., bit line 1015-b, bit line 1015-c, word line1010-e, and word line 1010-f as illustrated in layout 1007, or word line1010-a, word line 1010-b, bit line 1015-a, and bit line 1015-b asillustrated in array structure 1005.

FIG. 11 illustrates an example of a 3D cross-point memory arraystructure 1105 that may include two or more decks of memory cells andmay be formed in accordance with the fabrication techniques of thepresent disclosure. Array structure 1105 may comprise two decks ofmemory cells (e.g., an upper deck 1160-a and a lower deck 1160-b). Thetwo decks of memory cells collectively include two sets of first accesslines (e.g., upper deck 1160-a includes one set of word lines 1110-a and1110-b, and lower deck 1160-b includes another set of word lines 1110-cand 1110-d) that may be concurrently formed, two memory layers of memorymaterials (e.g., memory layers 1120-a and 1120-b) that may beconcurrently formed, and one set of second access lines (e.g., bit lines1115) that is common for both decks of memory cells. First access lines(e.g., word lines 1110) may extend in a first direction (e.g.,x-direction) while second access lines (e.g., bit lines 1115) may extendin a second, different direction (e.g., z-direction). Each first accesslines of the set of first access lines (e.g., word lines 1110) may beparallel to each other first access line of the set of first accesslines, and each second access lines of the set of second access lines(e.g., bit lines 1115) may be parallel to each other second access lineof the set of second access lines. The first access lines (e.g., wordlines 1110) may be substantially orthogonal to the second access lines(e.g., bit lines 1115) as depicted in the array structure 1105.

The upper deck 1160-a includes word lines 1110-a and 1110-b, memorylayer 1120-a, and bit lines 1115, and the lower deck 1160-b includesword lines 1110-c and 1110-d, memory layer 1120-b, and bit lines 1115.Thus, bit lines 1115 are common to both upper deck 1160-a and lower deck1160-b. Further, the word lines 1110 may be examples of the firstconductive lines formed in the first electrode layer (e.g., layer 315-aand layer 315-b as described with reference to FIG. 3, D1 layer asdescribed with reference to FIGS. 5-7). Similarly, the bit lines 1115may be examples of the second conductive lines formed in the secondelectrode layer (e.g., layer 325 as described with reference to FIG. 3,D2 layer as described with reference to FIGS. 5-7). Lastly, the memorylayers 1120 may be examples of the memory layers (e.g., layer 320-a andlayer 320-b as described with reference to FIG. 3, DM layer as describedwith reference to FIGS. 5-7). Hence, the upper deck 1160-a maycorrespond to an upper deck of memory cells formed in a first subset ofthe composite stack 305-a comprising layer 315-a, layer 320-a, and layer325 while the lower deck 1160-b may correspond to a lower deck of memorycells formed in a second subset of the composite stack 305-a comprisinglayer 325, layer 320-b, and layer 315-b.

The array structure 1105 shows horizontal (x- or z-direction) spacesbetween structures within a layer (e.g., a space between word line1110-a and word line 1110-b within a first electrode layer), which maybe filled with a dielectric material. The array structure 1105 alsoshows vertical (y-direction) spaces between layers—e.g., a space betweenthe memory layer 1120-a and the first electrode layer including wordlines 1110-a and 1110-b—for illustration purposes only. Such verticalspaces shown in the array structure 1105 may not exist in actualembodiments. In some cases, a portion of an interface between the memorylayer and the electrode layer may include other materials, such as anadditional electrode material (e.g., carbon) as describe with referenceto FIG. 7.

The array structure 1105 includes memory layers 1120-a and 1120-bcorresponding to two respective decks of memory cells. An initial stackof layers (e.g., stack 305-a described with reference to FIG. 3) mayinclude one or more memory layers 1120. One or more memory layers 1120,as a part of the initial stack, may include a sheet of a placeholdermaterial. In some cases, the placeholder material may be a thirddielectric material as described reference to FIG. 5. In some cases,memory layers 1120, after completing processing steps to build the arraystructure 1105, may include a plurality of memory material elements,each memory material element in a 3D bar shape as illustrated in diagram1106.

FIG. 11 includes a diagram 1106 that illustrates a memory layer 1120 inisolation, which includes eight 3D bar-shaped memory material elements(e.g., bar-shaped memory material elements 1135). 3D bar-shaped memorymaterial elements 1135-a through 1135-d of diagram 1106 may correspondto four of the 3D bar-shaped memory material elements depicted in memorylayer 1120-a of array structure 1105.

One or more portions of each 3D bar-shaped memory material element(e.g., memory material element 1135-a) may comprise memory cells 105 andmay operate in conjunction with the first access lines and the secondaccess lines. Such portions of memory material element 1135-a may bereferred to as cell areas 1125 (e.g., cell area 1125-a) and may belocated within a memory layer 1120 where first access lines (e.g., wordline 1110-a) and second access lines (e.g., bit line 1115-a)topologically intersect. The cell areas 1125 may correspond tocross-points 465 (e.g., an area of the cross-point associated withwidths of access lines) described with reference to FIG. 4. In addition,the cell area 1125 may be an example of cell area 841 or cell area 881as described with reference to FIG. 8.

Further, the cell area 1125 and the thickness of memory layer 1120(e.g., thickness of memory material element 1135-a) may define a cellvolume 1126. Cell volume 1126 may refer to a volume of memory materialthat functions as a memory cell 105 (e.g., as a portion of memorymaterial configured to store a logic state). In some cases, the memorymaterial may include different crystallographic phases, and differentcrystallographic phases may correspond to different logical states. Inother cases, the memory material may include different localcompositions, and different local compositions may correspond todifferent logical states. In some cases, electrical operationsassociated with access lines (e.g., a voltage difference between a wordline and a bit line) may alter the crystallographic phase of the memorymaterial (or the local composition of the memory material) included in acell volume 1126 without altering remaining portions of the memorymaterial element 1135. Such electrical delineation between the memorymaterial included in a cell volume 1126 and the remaining portions ofthe memory material element 1135 may be referred to as electricalconfinement of an active cell volume. In some cases, the cell volume1126 of a memory cell 105 may be referred to as the active cell volumeof the memory cell 105.

In addition, one or more physical separations (e.g., channel 1136-a or1136-b filled with a dielectric material as illustrated in diagram1106), which separate each 3D bar-shaped memory material element fromeach other, may also define the cell volume 1126 and provide physicalseparation on at least three surfaces of a memory cell 105 (e.g., threesurfaces of a cell volume 1126). In some case, such physical separationmay be referred to a physical confinement of an active cell volume—e.g.,in contrast to electrical confinement of an active cell volume.

In an illustrative example of cell volume 1126, each cell volume 1126includes one interface defined by electrical confinement and anotherthree interfaces defined by physical confinement. In some cases, amemory cell 105 comprising a memory material defined by physicalconfinement of active cell volume may be less prone to variousundesirable phenomena (e.g., disturbs) during memory cell operations.For example, a memory cell 105 of the array structure 1105 includes anactive cell volume defined by three interfaces of physical confinementand two interfaces of electrical confinement. In contrast, a memory cell105 of the array structure 1005 includes an active cell volume definedby two interfaces of physical confinement and two interfaces ofelectrical confinement. Thus, a memory cell 105 of the array structure1105 may be less prone to the undesirable phenomena than a memory cell105 of the array structure 1005 (and a memory cell 105 of the arraystructure 905).

FIG. 11 also illustrates a layout 1107. The layout 1107 may be anexample of a layout 805 as described with reference to FIG. 8, and mayillustrate how a pattern of vias may concurrently form one or more 3Dbar-shaped memory material elements 1135 within each of multiple memorylayers (e.g., layer 320-a, layer 320-b described with reference to FIG.3) included in a stack. As illustrated with reference to FIG. 4A, a setof vias arranged in a row may be used to form a loop (e.g., loop 450) ofa filler material at a target layer. In the context of FIG. 4A, as wellas, for example, FIGS. 5 and 6, the filler material may be a conductivematerial, such as an electrode material. But similar techniques may alsobe used to form a loop of memory material (e.g., chalcogenide material220) in each memory layer (e.g., layer 320-a, layer 320-b) by using amemory material as the filler material—that is, a portion of aplaceholder material (e.g., a third dielectric material) at each memorylayer may be replaced by a loop of memory material (e.g., chalcogenidematerial 220). Subsequently, the loop of memory material may be severed(e.g., separated) into any number of segments by using another set ofvias to form channels (e.g., channels such as channel 420) at the memorylayer, where the channels intersect (and thereby separate, divide,sever) the loop of memory material into multiple memory materialelements. The channels that sever the loops of memory material may befilled with a dielectric material.

In the illustrative example using the layout 1107, one or more sets offirst vias, each set of first vias arranged in a row in a verticaldirection (z-direction)—e.g., either of groups of five vias 1140-a and1140-b—may be used to form, in some cases concurrently, a first numberof loops of memory material (e.g., two loops of memory material) withineach of one or more memory layers (e.g., memory layers 320-a or 320-b).The sets of first vias may be formed at a top layer (e.g., layer 310) ofa composite stack (e.g., stack 305-a), as a result of a photolithographystep and an anisotropic etch step. A first channel may be formed usingone of the sets of first vias at the memory layer by removing a portionof a placeholder material from the memory layer through the set of firstvias. As such, the first channel may be aligned with the set of firstvias. Subsequently, a memory material may fill the first channel. Then,a second channel may be formed within the first channel filled with thememory material by removing a portion of memory material using the sameset of first vias. The second channel may be narrower than the firstchannel and may be filled with a dielectric material. Filling the secondchannel with a dielectric material may create a loop (e.g., a band,ring, or racetrack) of memory material that surrounds the dielectricmaterial in the second channel.

Subsequently, one or more sets of second vias, each set of second viasarranged in a row in a horizontal direction (x-direction)—e.g., eitherof groups of five vias 1140-c and 1140-d—may be used to form, in somecases concurrently, a second number of horizontal channels (e.g., twohorizontal channels) filled with a dielectric material at each of theone or more memory layers comprising a first number of loops of memorymaterial. The sets of second vias may be formed at a top layer (e.g.,layer 310) of a composite stack (e.g., stack 305-a), as a result of aphotolithography step and an anisotropic etch step. As depicted in thelayout 1107, the sets of second vias arranged in a row in the horizontaldirection (x-direction) may each intersect the sets of first viasarranged in a row in the vertical direction (z-direction). Formation ofhorizontal (x-direction) channels (e.g., a third channel) filled with adielectric material may divide (e.g., sever or separate) the loops ofmemory material at the memory layer (e.g., layer 320-a) to produce aplurality of discrete sections (e.g., bars) of memory material at thememory layer (e.g., memory material 1145-a through 1145-d). In otherwords, the third channel may separate the memory material within thefirst channel (e.g., the band of memory material) into a plurality ofmemory material elements (e.g., memory material elements 1135 of diagram1106).

Thus, two sets of vias—e.g., the sets of first vias and the sets ofsecond vias—may respectively be used to form a number of loops of memorymaterial at one or more memory layers (e.g., layer 320-a, layer 320-b)that initially comprises a placeholder material (e.g., using the sets offirst vias) and to divide the loops of memory material into a pluralityof 3D bar-shaped memory material elements (e.g., using the sets ofsecond vias).

It should be appreciated that the same sets of vias (e.g., the sets offirst vias and the sets of second vias) used to form the plurality of 3Dbar-shaped memory material elements at the memory layer may also be usedto form sets of access lines (e.g., word lines 1110 and bit lines 1115)at electrode layers as described, for example, with reference to layout850 and layout 855 of FIG. 8. For example, the sets of first vias (e.g.,groups of five vias 1140-a and 1140-b) may be used to form a firstnumber of loops of memory material at a memory layer (e.g., memory layer320-a) and to form a first number of loops of electrode material at anelectrode layer (e.g., electrode layer 315-a or electrode layer 315-b).

Further, each bar-shaped memory material element (e.g., memory materialelement 1145) of layout 1107 may include two end regions (e.g., region1150-a) where a word line (e.g., 1110-e) and a bit line (e.g., 1115-b)topologically intersect, and the portion of the memory material elementat the topological intersection may be configured to function as amemory cell 105. Hence, the area corresponding to the intersectingaccess lines (e.g., word line 1110-e and bit line 1115-b) of the endregions of each bar-shaped memory material element of layout 1107 may beequivalent to cell area 1125 of array structure 1105. In other words,each bar-shaped memory material element may support two memory cells105. In addition, each bar-shaped memory material element (e.g., 1145-a)may be coupled with at least three electrodes—e.g., word line 1110-f,word line 1110-g, and bit line 1115-b as illustrated in layout 1107, orword line 1110-a, word line 1110-b, and bit line 1115-a as illustratedin array structure 1105.

In some cases, an apparatus that includes a 3D cross-point memory arraystructure (e.g., array structure 1005 or 1105 that may be built usingthe fabrication techniques described with reference to FIGS. 10 and 11)may include a stack that comprises a first electrode layer, a secondelectrode layer, and a memory layer between the first electrode layerand the second electrode layer, a plurality of first electrodes in thefirst electrode layer, a plurality of second electrodes in the secondelectrode layer, and a plurality of memory material elements at thememory layer, each memory material element coupled at least one firstelectrode of the plurality of first electrodes and at least two secondelectrodes of the plurality of second electrodes.

In some examples of the apparatus described above, each memory materialelement is coupled with two first electrodes and one second electrode.In some examples of the apparatus described above, each memory materialelement is coupled with two first electrodes and two second electrodes.In some examples of the apparatus described above, each memory materialelement is coupled with the at least one first electrode through aconformal liner that is in contact with three surfaces of the at leastone first electrode. In some examples of the apparatus described above,separation distances between first electrodes within the plurality offirst electrodes are non-uniform. In some examples of the apparatusdescribed above, a subset of the plurality of first electrodes have acommon longitudinal axis. In some examples of the apparatus describedabove, a first electrode has at least one dimension smaller than aminimum feature size. In some examples of the apparatus described above,each memory material element comprises a chalcogenide material.

In some cases, an apparatus that includes a 3D cross-point memory arraystructure (e.g., array structure 905, 1005 or 1105 that may be builtusing the fabrication techniques described with reference to FIGS. 9through 11) may include a stack that comprises a first electrode layer,a second electrode layer, and a memory layer between the first electrodelayer and the second electrode layer, a plurality of first electrodes inthe first electrode layer, a plurality of second electrodes in thesecond electrode layer, and a memory material element at the memorylayer, the memory material element configured to comprise a plurality ofmemory cells.

In some examples of the apparatus described above, the memory materialelement is configured to comprise two memory cells. In some examples ofthe apparatus described above, the memory material element is configuredto comprise four memory cells. In some examples of the apparatusdescribed above, the memory material element comprises a sheet of memorymaterial perforated by a plurality of dielectric plugs. In some examplesof the apparatus described above, the plurality of dielectric plugscomprises a first row of dielectric plugs in a first direction, and asecond row of dielectric plugs in a second direction different from thefirst direction. In some examples of the apparatus described above, adielectric plug is common to the first row of dielectric plugs and thesecond row of dielectric plugs. In some examples of the apparatusdescribed above, the memory material element comprises a chalcogenidematerial.

FIG. 12 illustrates an example of a 3D cross-point memory arraystructure 1205 that may include two or more decks of memory cells andmay be formed in accordance with the fabrication techniques of thepresent disclosure. Array structure 1205 may comprise two decks ofmemory cells (e.g., an upper deck 1260-a and a lower deck 1260-b). Thetwo decks of memory cells collectively include two sets of first accesslines (e.g., upper deck 1260-a includes one set of word lines 1210-a and1210-b, and lower deck 1260-b includes another set of word lines 1210-cand 1210-d) that may be concurrently formed, two memory layers of memorymaterials (e.g., memory layers 1220-a and 1220-b) that may beconcurrently formed, and one set of second access lines (e.g., bit lines1215) that is common for both decks of memory cells. First access lines(e.g., word lines 1210) may extend in a first direction (e.g.,x-direction) while second access lines (e.g., bit lines 1215) may extendin a second, different direction (e.g., z-direction). Each first accesslines of the set of first access lines (e.g., word lines 1210) may beparallel to each other first access line of the set of first accesslines, and each second access lines of the set of second access lines(e.g., bit lines 1215) may be parallel to each other second access lineof the set of second access lines. The first access lines (e.g., wordlines 1210) may be substantially orthogonal to the second access lines(e.g., bit lines 1215) as depicted in the array structure 1205.

The upper deck 1260-a includes word lines 1210-a and 1210-b, memorylayer 1220-a, and bit lines 1215, and the lower deck 1260-b includesword lines 1210-c and 1210-d, memory layer 1220-b, and bit lines 1215.Thus, bit lines 1215 are common to both upper deck 1260-a and lower deck1260-b. Further, the word lines 1210 may be examples of the firstconductive lines formed in the first electrode layers (e.g., layer 315-aand layer 315-b as described with reference to FIG. 3, D1 layer asdescribed with reference to FIGS. 5-7). Similarly, the bit lines 1215may be examples of the second conductive lines formed in the secondelectrode layer (e.g., layer 325 as described with reference to FIG. 3,D2 layer as described with reference to FIGS. 5-7). Lastly, the memorylayers 1220 may be examples of the memory layers (e.g., layer 320-a andlayer 320-b as described with reference to FIG. 3, DM layer as describedwith reference to FIGS. 5-7). Hence, the upper deck 1260-a maycorrespond to an upper deck of memory cells formed in a first subset ofthe composite stack 305-a comprising layer 315-a, layer 320-a, and layer325 while the lower deck 1260-b may correspond to a lower deck of memorycells formed in a second subset of the composite stack 305-a comprisinglayer 325, layer 320-b, and layer 315-b.

The array structure 1205 shows horizontal (x- or z-direction) spacesbetween structures within a layer (e.g., a space between word line1210-a and word line 1210-b within a first electrode layer), which maybe filled with a dielectric material. The array structure 1205 alsoshows vertical (y-direction) spaces between layers—e.g., a space betweenthe memory layer 1220-a and the first electrode layer including wordlines 1210-a and 1210-b—for illustration purposes only. Such verticalspaces shown in the array structure 1205 may not exist in actualembodiments. In some cases, a portion of an interface between the memorylayer and the electrode layer may include other materials, such as anadditional electrode material (e.g., carbon) as describe with referenceto FIG. 7.

The array structure 1205 includes memory layers 1220-a and 1220-bcorresponding to two respective decks of memory cells. An initial stackof layers (e.g., stack 305-a described with reference to FIG. 3) mayinclude one or more memory layers 1220. One or more memory layers 1220,as a part of the initial stack, may include a sheet of a placeholdermaterial. In some cases, the placeholder material may be a thirddielectric material as described reference to FIG. 5. In some cases,memory layers 1220, after completing processing steps to build the arraystructure 1205, may include a plurality of memory material elements,each memory material element in a 3D wedge shape as illustrated indiagram 1206.

FIG. 12 includes a diagram 1206 that illustrates a memory layer 1220 inisolation, which includes sixteen 3D wedge-shaped (e.g., at least twoplanar surfaces and at least one curved surface) memory materialelements (e.g., memory material elements 1235). 3D wedge-shaped memorymaterial elements 1135-a through 1135-h of diagram 1206 may correspondto eight 3D wedge-shaped memory material elements as depicted in memorylayer 1220-a of array structure 1205.

Each 3D wedge-shaped memory material element as a whole (orsubstantially as a whole) may comprise memory cells 105 and may operatein conjunction with the first access lines and the second access lines.Thus, an area (e.g., an area corresponding to a top-down view of the 3Dwedge-shaped memory material element) of memory material element 1235-aas a whole may be referred to as cell areas 1225 (e.g., cell area1225-a) and may be located within a memory layer 1220 where first accesslines (e.g., word line 1210-a) and second access lines (e.g., bit line1215-a) topologically intersect. The cell areas 1225 may correspond tocross-points 465 (e.g., an area of the cross-point associated withwidths of access lines) described with reference to FIG. 4. In addition,the cell area 1225 may be an example of cell area 841 or cell area 881as described with reference to FIG. 8.

Further, cell area 1225 and the thickness of memory layer 1220 (e.g.,thickness of 3D wedge-shaped memory material element 1235-a) may definea cell volume 1226. Cell volume 1226 may refer to a volume of memorymaterial that functions as a memory cell 105. In some cases, the memorymaterial may include different crystallographic phases, and differentcrystallographic phases may correspond to different logical states. Inother cases, the memory material may include different localcompositions, and different local compositions may correspond todifferent logical states. In some cases, electrical operationsassociated with access lines (e.g., a voltage difference between a wordline and a bit line) may alter the crystallographic phase of the memorymaterial (or the local composition of the memory material) included inan entire cell volume 1226 (or substantially entire cell volume 1226).In some cases, the cell volume 1226 of a memory cell 105 may be referredto as the active cell volume of the memory cell 105.

Each of the 3D wedge-shaped memory material elements may be surroundedby physical separations (e.g., each of channel 1236-a through 1236-dfilled with a dielectric material as illustrated in diagram 1206) on allsides except surfaces coupled with a word line and a bit line, or anintervening electrode material (e.g., carbon) as described withreference to FIG. 7—that is, each 3D wedge-shaped memory materialelement may be fully physically confined (e.g., negligible electricalconfinement of the active cell volume 1226). Further, an area of 3Dwedge-shaped memory material element (e.g., the area corresponding to atop-down view of the 3D wedge-shaped memory material element 1235) mayapproximately correspond to an area corresponding to the intersectingaccess lines (e.g., a word line and a bit line).

In some cases, a memory cell 105 comprising a memory material defined byphysical confinement of active cell volume may be less prone to variousundesirable phenomena (e.g., disturbs) during memory cell operations.For example, a memory cell 105 of the array structure 1205 includes anactive cell volume defined by four interfaces of physical confinement(e.g., full physical confinement) and no (or negligible) interfaces ofelectrical confinement. In contrast, a memory cell 105 of the arraystructure 1105 includes an active cell volume defined by threeinterfaces of physical confinement and one interface of electricalconfinement. Thus, a memory cell 105 of the array structure 1205 may beless prone to the undesirable phenomena than a memory cell 105 of thearray structure 1105 (and a memory cell 105 of the array structure 1005or a memory cell 105 of the array structure 905).

FIG. 12 also illustrates a layout 1207. The layout 1207 may be anexample of a layout 805 as described with reference to FIG. 8, and mayillustrate how a pattern of vias may form one or more 3D wedge-shapedmemory material elements within each of multiple memory layers (e.g.,layer 320-a, layer 320-b described with reference to FIG. 3). Asdescribed with reference to FIG. 4A, a via (e.g., via 410) may be usedto form a cavity (e.g., a cavity 415) in a placeholder material (e.g., adielectric material) at a memory layer, and the cavity may be filledwith a filler material (e.g., a memory material). Accordingly, a 3D discof memory material (e.g., chalcogenide material 220) may be formed inthe memory layer (e.g., layer 320-a, layer 320-b) when the fillermaterial is a memory material—that is, a portion of placeholder material(e.g., a third dielectric material) at the memory layer may be replacedby a disc of memory material (e.g., chalcogenide material 220).Subsequently, the disc of memory material may be severed (e.g.,separated) into any number of segments by using sets of vias to formchannels (e.g., channels such as channel 420) at the memory layer, wherethe channels intersect (and thereby separate, divide, sever) the disc ofmemory material into multiple discrete memory material elements. Thechannels that sever the disc of memory material may be filled with adielectric material.

In the illustrative example using the layout 1207, a via that is commonto multiple sets (e.g., rows) of vias (e.g., via 1240-a, which isillustrated in layout 1207, like other common vias, as a dark-shadedvia) may be used to form cavities, in some cases concurrently, at eachof one or more memory layers (e.g., memory layers 320-a or 320-b). Inother words, a via may be used to form a cavity within a memory layer,which includes a placeholder material. The size of the cavity may beconfigured (e.g., by determining the associated via width along with anamount of the placeholder material to be removed by an isotropic etchstep as described with reference to FIGS. 3 through 7) such that aportion of the cavity may overlap in the x- or z-direction with across-sectional area of a word line and a bit line (e.g., an area oftopologically intersecting portion of a word line and a bit line) thatmay be above and below the cavity, respectively, in the y-direction.Subsequently, a memory material (e.g., chalcogenide material 220) mayfill the cavity, thereby creating a 3D disc of memory material 1245(e.g., 3D discs filled with a memory material) within each cavity. Thus,the size of each 3D disc 1245 (e.g., 3D discs 1245-a through 1245-d) mayillustrate a size of a cavity that was filled to create the 3D discs1245

Subsequently, one or more sets of first vias, each set of first viaarranged in a row in a vertical direction (z-direction)—e.g., either ofgroups of five vias 1241-a and 1241-b—may be used to form, in some casesconcurrently, a first number of first channels (e.g., using thetechniques described in reference to FIG. 4) filled with a dielectricmaterial within a memory layer (e.g., memory layers 320-a or 320-b)comprising the 3D discs 1245. Formation of the first channels mayinclude removing a portion of the memory material from each 3D disc 1245using a corresponding set of first vias. As a result, each of the 3Ddiscs may be separated (e.g., bisected) into two portions. In otherwords, the first channels may separate the 3D discs of memory materialsinto discrete memory material elements at the memory layer along the zaxis.

In some cases, a portion of the memory material of a 3D disc 1245 ofmemory material may be removed, using the via used to form the 3D disc1245 and preceding cavity, prior to forming the first channels such thata ring of memory material may be formed at the memory layer. The ring ofmemory material may surround a vertical axis (e.g., y-direction, avertical axis with respect to a substrate) of the via used to for the 3Ddisc 1245. Subsequently, forming the first channels may separate (e.g.,bisect) the rings of memory material into discrete memory materialelements at the memory layer along the z axis.

In addition, one or more sets of second vias, each set of second viasarranged in a row in a horizontal direction (x-direction)—e.g., groupsof five vias 1241-c and 1241-d—may be used to form, in some casesconcurrently, a second number of horizontal channels (e.g., using thetechniques described in reference to FIG. 4) filled with a dielectricmaterial within the memory layer. Formation of the second channels mayinclude removing an additional portion of the memory material from each3D disc 1245 using a corresponding set of second vias. As a result, eachof the two discrete portions (e.g., segments) of a 3D disc 1245resulting from the formation of the corresponding first channel may befurther separated (e.g., bisected) along the x-axis, thereby creatingfour discrete wedge-shaped memory material elements from each disc 1245(or ring, as applicable) of memory material. In other words, the secondchannel filled with a dielectric material further separates (e.g.,bisects) the memory material of the 3D discs 1245 filled with the memorymaterial into additional discrete memory material elements at the memorylayer along the x-axis.

Thus, formation of vertical (z-direction) and horizontal (x-direction)channels filled with a dielectric material using two sets of vias—e.g.,the sets of first vias and the sets of second vias—may divide (e.g.,separate, sever, split) each of the 3D discs 1245 into four 3Dwedge-shaped memory material elements. Each of the four 3D wedge-shapedmemory material elements may have a curved surface (e.g., surface 1260as illustrated in diagram 1206). The curved surface of memory materialmay be a result of filling the cavity, which may have had a curved outersurface, with the memory material. Additionally, each of the four 3Dwedge-shaped memory material elements may have one or more planarizedsurfaces (e.g., surface 1265 as illustrated in diagram 1206).

In some cases, a top layer (e.g., layer 310) of a stack (e.g., stack305-a) may include a pattern of vias including both the sets of firstvias and the sets of second vias, hence forming a set of vias in atwo-dimensional matrix, as a result of a photolithography step and ananisotropic etch step creating the 2D matrix pattern of vias in the toplayer. In some cases, the top layer may include a hardmask material,which may retain the pattern of vias (e.g., the vias in the 2D matrix)throughout various processing steps as described with FIGS. 3 through 7.As such, processing steps for forming a channel may simultaneously formchannels (e.g., channels 1236-a through 1236-d filled with a dielectricmaterial) in both directions (e.g., horizontal and vertical directions,namely x-direction and z-direction) and may produce four 3D wedge-shapedmemory material elements (e.g., memory material elements 1235) from eachof the 3D discs of memory material (e.g., 3D discs 1245).

It should be appreciated that the same set of vias (e.g., the sets offirst vias and the sets of second vias) used to form the plurality of 3Dwedge-shaped memory material elements (e.g., memory material elements1235 of diagram 1206, memory material elements 1250-a of layout 1207)may be used to form sets of access lines (e.g., word lines 1210 and bitlines 1215) at electrode layers as described, for example, withreference to layout 850 and layout 855 of FIG. 8. For example, the setof first vias arranged in a row in a horizontal direction (e.g., groupsof five vias 1241-c and 1241-d) may be used to separate the 3D discs ofmemory material at a memory layer (e.g., memory layer 320-a) and to forma first number of loops of electrode material at an electrode layer(e.g., electrode layer 315-a or electrode layer 315-b) to form firstaccess lines (e.g., word lines 1210).

Further, each 3D wedge-shaped memory material elements of layout 1207(e.g., memory material element 1250-a) may correspond to an area where aword line (1210-e) and a bit line (e.g., 1215-b) topologicallyintersect, and the memory material element in its entirety (substantialentirety) may be configured to function as a memory cell 105. Hence, thearea corresponding to the intersecting access lines (e.g., word line1210-e and bit line 1215-b) may correspond (substantially correspond) tocell area 1225 of array structure 1205. In other words, eachwedge-shaped memory material element may support one memory cells 105.In addition, each wedge-shaped memory material element (e.g., memorymaterial element 1235 or 1250) may be coupled with two electrodes—e.g.,word line 1210-e and bit line 1215-b as illustrated in layout 1207, orword line 1210-a and bit line 1215-a as illustrated in array structure1205. In some cases, each wedge-shaped memory material element may becouple with the one first electrode and the one second electrode througha conformal liner (e.g., carbon-based material as described withreference to FIG. 7).

In some cases, an apparatus that includes a 3D cross-point memory arraystructure (e.g., array structure 1205 that may be built using thefabrication techniques described with reference to FIG. 12) may includea stack that comprises a first layer, a memory layer, and a secondlayer, the memory layer between the first layer and the second layer, aplurality of first electrodes in the first layer, a plurality of secondelectrodes in the second layer, and a plurality of memory materialelements in the memory layer, each memory material element having acurved surface.

In some examples of the apparatus described above, each memory materialelement has a planarized surface. In some examples of the apparatusdescribed above, each memory material element is coupled with one firstelectrode and one second electrode. In some examples of the apparatusdescribed above, a memory material element is coupled with the one firstelectrode and the one second electrode through a conformal liner. Insome examples of the apparatus described above, each memory materialelement is configured to comprise a single memory cell. In some examplesof the apparatus described above, each memory material element comprisesa chalcogenide material. In some examples of the apparatus describedabove, each first electrode of the plurality of first electrodes isparallel to each other first electrode of the plurality of firstelectrodes, and each second electrode of the plurality of secondelectrodes is parallel to each other second electrode of the pluralityof second electrodes.

FIGS. 13 through 14 illustrate various aspects of forming sockets inaccordance with fabrication techniques of the present disclosure, whichmay be used for example, to make a 3D memory array such as the exampleof memory array 202 illustrated in FIG. 2. In the context of 3D memoryarray architecture, a socket region may include various interconnectsbetween a memory array and other components (e.g., row decoder 120,sense component 125, or column decoder 130, as described with referenceto FIG. 1) in a memory device. In some cases, a socket region mayinclude features (e.g., gaps) created for electrical isolation purposes(e.g., separating loops 450 of conductive material into multipledistinct segments, which may be configured as access lines).

The fabrication techniques described herein may include using a subsetof a pattern of vias (e.g., access vias), where the pattern of vias mayalso be used for concurrent formation of two or more decks of memorycells, each deck comprising a 3D cross-point structure that includesaccess lines and memory cells. The subset of the pattern of vias may beused for separating (e.g., dividing into a plurality of distinctportions) loops of access line material (e.g., loops 455 or loops 460described with reference to FIG. 4B) such that each loop of access linematerial may form at least two distinct access lines. In some cases, thesubset of vias may also be used to connect access lines (e.g., wordlines, bit lines) to various nodes of other components (e.g., rowdecoder 120, sense component 125, or column decoder 130) of a memorydevice.

FIG. 13 illustrates an exemplary layout 1301 of a socket region of a 3Dcross-point memory array that may include two or more decks of memorycells in accordance with the present disclosure. Layout 1301 illustratesa 2D matrix of vias that includes groups of first vias, each group offirst vias arranged in a row in a horizontal direction (x-direction)(e.g., groups of first vias 1340-a, 1340-b, 1340-c), and groups ofsecond vias, each group of second vias arranged in a row in a verticaldirection (y-direction) (e.g., groups of second vias 1341-a, 1341-b,1341-c). Layout 1301 also illustrates a pattern of first openings (e.g.,openings 1350-a through 1350-c) and a pattern of second openings (e.g.,openings 1360-a through 1360-b).

Each group of first vias may have been used to form access linesextending in the horizontal direction (x-direction) (e.g., word line1310-a and word line 1310-b) at each first layer of a stack (e.g., layer315-a and layer 315-b, as described with FIG. 3). For example, group offirst vias 1340-a may have been used to form a word line 1310-a and aword line 1310-b at each first layer of the stack. As such, theexemplary layout 1301 may depict a socket region for word lines (e.g.,the access lines extending in the horizontal direction). In some cases,access lines extending in vertical direction (y-direction) (e.g., bitlines) may be absent in the socket region for word lines. Similarly, asocket region for bit lines may be formed (not shown) in a differentarea of the 3D cross-point memory array using similar techniques. Insome cases, word lines may be absent in the socket region for bit lines.

First openings (e.g., opening 1350-a) may be a part of a pattern offirst openings created using a first socket mask (e.g., SM1 mask). SM1mask may be used to form a number of first openings (e.g., each openingcorresponding to lack of photoresist or lack of hardmask material) in atop (e.g., exposed) layer of a stack, which may facilitate the formationof structures in one or more lower (e.g., buried) layers of the stack.The stack may include any number of electrode layers and memory layers.The first openings (e.g., opening 1350-a) may overlap with a via (e.g.,via 1342-a). As illustrated in layout 1301, the first openings may havea relaxed design rule when compared to the first vias and the secondvias—e.g., a size of a first opening or a distance between firstopenings may be greater than a size of vias or a distance between vias.

A first opening may serve as a via of a different geometry (e.g., as avia larger than either a first via or a second via) for the purpose ofsocket formation, or may isolate one or more first vias or second vias(e.g., make the one or more first vias or second vias accessible for asubsequent processing step while making one or more other first vias orsecond vias inaccessible for the subsequent processing step). In somecases, a first opening may be used to form a gap in a target electrodeby anisotropically etching through the target electrode, therebydividing the target electrode into two distinct electrodes (e.g., twodistinct access lines). For example, opening 1350-a may create a gap inword line 1310-c and word line 1310-d by anisotropically etching throughthe electrode material of word line 1310-c as well as the electrodematerial of word line 1310-d. Word line 1310-c may have been formedusing group of first vias 1340-b, and word line 1310-d may have beenformed using group of second vias 1340-c. Word line 1310-c may beparallel (or substantially parallel) to word line 1310-d.

In other cases, a first opening (e.g., opening 1350-a) may facilitateforming a gap in a target electrode by forming a second via hole througha via with which the first opening overlaps (e.g., via 1342-a, which maybe included in group of second vias 1341-c). The second via hole (e.g.,the second via hole corresponding to via 1342-a) may extend through astack to a target layer that includes a target electrode in which a gapis to be created. Subsequently, a portion of the target electrode may beremoved through the second via hole, and through the overlapping firstopening—e.g., by using an isotropic etch step. As such, the targetelectrode (e.g., an access line at the target layer) may be separatedinto at least two distinct segments isolated from each other.

As a result of creating a gap in a target electrode, either using thefirst opening (e.g., opening 1350) to anisotropically etch through thetarget electrode material at an electrode layer or using the firstopening (e.g., opening 1350) to create a second via hole correspondingto a via with which the first opening overlaps (e.g., a second via holecorresponding to via 1342-a) and isotropically etching the targetelectrode material at an electrode layer (e.g., the electrode layercomprising the target electrode material), an access line (e.g., anelectrode comprising the target electrode material) may become isolatedfrom a collinear access line at the electrode layer. For example, a wordline 1310-c (e.g., an access line) may have at least two segments,namely a left segment (e.g., segment 1310-c 1) and a right segment(e.g., segment 1310-c 2) with respect to opening 1350-a, and the leftsegment may be isolated from and collinear with the right segment (e.g.,may be a collinear access line). In some cases, a subset of theplurality of first electrodes (e.g., word lines) may have a commonlongitudinal axis as a result of creating a gap in the first electrode.

Second openings (e.g., opening 1360-a) may be a part of a pattern ofsecond openings created using a second socket mask (SM2 mask) thatdefines a number of second openings (e.g., lack of photoresist or lackof hardmask material). SM2 mask may be used to form a number of secondopenings (e.g., each opening corresponding to lack of photoresist orlack of hardmask material) in a top (e.g., exposed) layer of a stack,which may facilitate the formation of structures in one or more lower(e.g., buried) layers of the stack. The stack may include any number ofelectrode layers and memory layers. The second openings (e.g., opening1360-a) may overlap with one or more vias (e.g., via 1342-b, via 1342-c)that may have been used to form a pair of access lines. For example, via1342-b (and via 1342-c) may be a part of a group of first vias (e.g.,group of first vias 1340-b), which may have been used to form word lines1310-c and 1310-e. As illustrated in layout 1301, the second openingsmay have a relaxed design rule when compared to the first vias and thesecond vias—e.g., a size of a second opening or a distance betweensecond openings may be greater than a size of vias or a distance betweenvias.

In some cases, the second openings may be used to make connections(e.g., interconnects) between a number of access lines (e.g.,electrodes) within a stack and a conductive element, which may bepositioned beneath the stack and may be in contact with the stack (e.g.,may be in contact with a lowest layer of the stack, which may comprisean etch-stop material, such as a hardmask material). The stack mayinclude an electrode layer comprising a target electrode material (e.g.,the electrode layer may comprise access lines that comprise theelectrode material) and a memory layer. The conductive element maycorrespond to a node of a circuit component of a memory device (e.g., anoutput node of a row decoder 120, an input node of a sense component125). In some cases, such a circuit component may be placed in asubstrate (e.g. substrate 204 described with reference to FIG. 2) oranother layer below the stack. The conductive element may be connectedto the circuit component through a number of metallic layers andinterconnects between the metallic layers.

In some cases, a second opening (e.g., opening 1360-a) may facilitateforming a via hole that extends through the stack to reach theconductive element. The via hole may correspond to a via (e.g., via1342-b, via 1342-c), with which the second opening may overlap (e.g.,opening 1360-a). A conductive material may fill the via hole to form aconductive plug that is coupled with the conductive element. Further,the conductive plug may be coupled to a target electrode (e.g., a wordline, a bit line) within the stack such that the target electrode may beelectrically coupled, by the conductive plug, with the conductiveelement of a circuit component of a memory device.

FIG. 14 illustrates example methods of making connections between atarget electrode at a target layer in a stack to a conductive element inaccordance with fabrication techniques of the present disclosure. Thestack may comprise a 3D cross-point memory array structure that mayinclude two or more decks of memory cells in accordance with the presentdisclosure. FIG. 14 illustrates diagram 1401, 1402, and 1403, asillustrative examples of fabrication techniques described herein. Thestack of layers in FIG. 14 may correspond to a stack such as the stackdescribed with reference to FIGS. 5 and 6 (e.g., stack 305 describedwith reference to FIG. 3). For example, the stack of layers in FIG. 14may include two decks of memory cells, and each deck of memory cells maycomprise one sets of word lines (e.g., word lines 910-a and 910-b of anupper deck 945-a or word lines 910-c and 910-d of a lower deck 945-b)and one set of bit lines (e.g., bit lines 915, which may be common forboth decks of memory cells).

The fabrication techniques described herein may be used for makingconnections between any target electrode at any target layer in a stack(e.g., stack 305) to a conductive element. For example, diagram 1401illustrates making connections between word lines of an upper deck(e.g., word line 910-a of upper deck 945-a) and a conductive element(e.g., conductive element 1450) while diagram 1403 illustrates makingconnections between word lines of a lower deck (e.g., word line 910-c oflower deck 945-b) and a conductive element (e.g., conductive element1450). Similarly, diagram 1402 illustrates making connections betweenbit lines (e.g., bit line 915 which may be common for both upper deck945-a and lower deck 945-b) and a conductive element (e.g., conductiveelement 1450). In some cases, a socket region for word lines (e.g., aregion where connections between word lines and conductive elements aremade) may be located in a different area of a 3D cross-point memoryarray from an area where a socket region for bit lines (e.g., a regionwhere connections between bit lines and conductive elements are made)may be located.

Diagram 1401 illustrates a method of making a connection between atarget electrode (e.g., a target electrode 1416-a at D1 layer 1415-a)and a conductive element (e.g., conductive element 1405). The targetelectrode 1416-a may be an example of a word line 910 of an upper deckof memory cells (e.g., word line 910-a)—e.g., the upper deck of memorycells may be above one or more other decks of memory cells in a memorydevice.

At processing step 1450, a via hole may be formed through a stack. Thevia hole may be formed by using a via included in a via pattern (e.g., avia shape in HM layer as described with reference to FIGS. 5 and 6), anda second opening (e.g., opening 1360-a described with reference to FIG.13) may overlap the via used to form the via hole. The via hole mayextend through the stack to the conductive element 1405. A conductivematerial may subsequently fill the via hole. In some cases, theconductive material that fills the via hole may be the same as anelectrode material—e.g., the conductive material that fills the via holeand a target electrode in the stack may in some cases comprise the sameconductive material. In some cases, a via hole filled with a conductivematerial may be referred to as a conductive plug (e.g., plug 1421). Thestructure illustrated at step 1450 of the diagram 1401 may correspond tothe structure illustrated at step 530 of the diagram 502 aftersubsequently having a via hole formed and filled with a conductivematerial.

At processing step 1455, an etch step may remove a portion of theconductive material from the via hole to expose a dielectric buffer(e.g., buffer 1430) interposed between the via hole and the targetelectrode (e.g., target electrode 1416-a). Subsequently, an etch step(e.g., an isotropic etch step) may remove (e.g., through chemicalselectivity) the dielectric buffer 1430 to expose the target electrode(e.g., target electrode 1416-a). The removal of the dielectric buffer1430 that exposes the target electrode (e.g., target electrode 1416-a)may simultaneously expose a second target electrode (e.g., targetelectrode 1416-b) within the target electrode layer (e.g., D1 layer1415-a). Further, the second target electrode (e.g., target electrode1416-b) may be located on an opposite side of the via hole relative tothe target electrode (e.g., target electrode 1416-a). For example, thevia used to form the via hole at processing step 1450 may havepreviously been used to form the target electrode and the second targetelectrode (e.g., target electrode 1416-a and target electrode 1416-b,which may have been formed as described above in reference to FIG. 5),and thus the via hole formed at processing step 1450 may be interposedbetween the target electrode and the second target electrode.

At processing step 1460, a conductive material may fill the spacecreated in the via hole at processing step 1455, thereby coupling thetarget electrode 1416-a (and the second target electrode 1416-b) withthe conductive element 1405 through the conductive plug (e.g., plug1421-a). At the completion of processing step 1460, the conductive plug1421-a (e.g., via hole filled with a conductive material) may have afirst width (e.g., diameter 1422-a) at a memory layer (e.g., memorylayer 1420) and a second width (e.g., diameter 1423-a) at an electrodelayer (e.g., D1 layer 1425-a). The second width (e.g., diameter 1423-a)may be larger than the first width (e.g., diameter 1422-a).

In some cases, at the completion of processing step 1460, a targetelectrode (e.g., the electrode of a word line of an upper deck of memoryarray) may be connected to a node of a circuit component (e.g., a rowdecoder 120) by the conductive plug (e.g., plug 1421-a) such that amemory controller (e.g., memory controller 140) may activate the targetelectrode (e.g., a word line 910-a) of the upper deck of memory cells(e.g., upper deck 945-a).

Diagram 1402 illustrates a method of making a connection between atarget electrode (e.g., a target electrode 1426-a at D2 layer 1425) anda conductive element (e.g., conductive element 1405). The targetelectrode 1426-a may be an example of a bit line (or other type ofaccess line) that is common for both an upper and a lower deck of memorycells (e.g., bit line 915-a)—e.g., the upper deck of memory cells may beabove one or more other decks of memory cells in a memory device,including the lower deck of memory cells.

At processing step 1451, a via hole may be formed through a stack. Thevia hole may be formed by using a via included in a via pattern (e.g., avia shape in HM layer as described with reference to FIGS. 5 and 6), anda second opening (e.g., opening 1360-a described with reference to FIG.13) may overlap the via used to form the via hole. The via hole mayextend through the stack to the conductive element 1405. A conductivematerial may subsequently fill the via hole. In some cases, theconductive material that fills the via hole may be the same as anelectrode material—e.g., the conductive material that fills the via holeand a target electrode in the stack may in some cases comprise the sameconductive material. In some cases, a via hole filled with a conductivematerial may be referred to as a conductive plug (e.g., plug 1421-b).The structure illustrated at step 1451 of the diagram 1402 maycorrespond to the structure illustrated at step 630 of the diagram 602after subsequently having a via hole formed and filled with a conductivematerial. In some cases, processing step 1450 and processing step 1451may occur concurrently—that is, plug 1421 and plug 1421-b may be formedsimultaneously.

At processing step 1465, an etch step may remove a portion of theconductive material from the via hole such that a dielectric layer(e.g., D1 layer 1415-a) may be exposed. Subsequently, a layer of aconformal liner (e.g., liner 1435) may be formed at the exposed surfaceof the dielectric layer (e.g., D1 layer 1415-a). The conformal liner(e.g., liner 1435) may comprise any material configured to protect theexposed surface of the dielectric layer (e.g., D1 layer 1415-a) toprevent subsequent etch steps from removing the dielectric material ofD1 layer 1415-a. In some cases, formation of a conformal liner may beomitted if selectivity associated with subsequent etch steps may besufficient to preserve (substantially preserve) the dielectric materialof D1 layer 1415-a.

At processing step 1470, an etch step may remove an additional portionof the conductive material from the via hole to expose anotherdielectric buffer (e.g., buffer 1431) interposed between the via holeand the target electrode (e.g., target electrode 1426-a). Subsequently,an etch step (e.g., an isotropic etch step) may remove (e.g., throughchemical selectivity) the dielectric buffer 1431 to expose the targetelectrode (e.g., the target electrode 1426-a). The removal of thedielectric buffer 1431 that exposes the target electrode (e.g., targetelectrode 1426-a) may simultaneously expose a second target electrode(e.g., target electrode 1426-b) within the target electrode layer (e.g.,D2 layer 1425). Further, the second target electrode (e.g., targetelectrode 1426-b) may be located on an opposite side of the via holerelative to the target electrode (e.g., target electrode 1426-a). Forexample, the via used to form the via hole at processing step 1451 mayhave previously been used to form the target electrode and the secondtarget electrode (e.g., target electrode 1426-a and target electrode1426-b, which may have been formed as described above in reference toFIG. 6), and thus the via hole formed at processing step 1451 may beinterposed between the target electrode and the second target electrode.

At processing step 1475, a conductive material may fill the spacecreated in the via hole at processing step 1470, thereby coupling thetarget electrode 1426-a (and the second target electrode 1426-b) withthe conductive element 1405 through the conductive plug (e.g., plug1421-c). At the completion of processing step 1475, the conductive plug1421-c (e.g., via hole filled with a conductive material) may have afirst width (e.g., either diameter 1422-b or diameter 1422-c) at amemory layer (e.g., a memory layer 1420) and a second width (e.g.,diameter 1424) at an electrode layer (e.g., D2 layer 1425). The secondwidth (e.g., diameter 1424) may be larger than the first width (e.g.,either diameter 1422-b or diameter 1422-c). Further, the conformal liner1435 may be interposed between the conductive plug 1421-c (e.g., viahole filled with a conductive material) and a dielectric material (e.g.,first dielectric material of D1 layer 1415-a) at the completion ofprocessing step 1475. Thus, the conductive plug 1421-c may have a thirdwidth (e.g., diameter 1423-b) at another electrode layer (e.g., D1 layer1415-a). In some cases, the third with (e.g., diameter 1423-b) may beless than the first width (e.g., either diameter 1422-a or diameter1422-b).

In some cases, at the completion of processing step 1475, a targetelectrode (e.g., the electrode of a bit line that may be common to bothupper and lower deck of memory array) may be connected to (e.g. coupledwith) a node of a circuit component (e.g., a column decoder 130) by theconductive plug (e.g., plug 1421-c) such that a memory controller (e.g.,memory controller 140) may activate the target electrode (e.g., the bitline 915) of both the upper and lower decks of memory cells.

Diagram 1403 illustrates a method of making a connection between atarget electrode (e.g., a target electrode 1416-c at another D1 layer1415-b) and a conductive element (e.g., conductive element 1405). Thetarget electrode 1416-c may be an example of a word line 910 of a lowerdeck of memory cells (e.g., word line 910-c)—e.g., the lower deck ofmemory cells may be below one or more other decks of memory cells in amemory device.

Aspects of processing step 1450 of diagram 1403 may be the same asprocessing step 1450 of diagram 1401. The via structure illustrated indiagram 1401 may be subsequently used to make a connection between thetarget electrode 1416-a at D1 layer 1415-a and the conductive element1405 while the via structure illustrated in diagram 1403 may besubsequently used to make a connection between the target electrode1416-c at D1 layer 1415-b and the conductive element 1405.

At processing step 1480, an etch step may remove a portion of theconductive material from the via hole such that a dielectric layer(e.g., D1 layer 1415-a) may be exposed. The dielectric layer exposed maybe the same as the layer that includes dielectric buffer 1430 depictedin diagram 1401. Subsequently, a layer of a conformal liner (e.g., liner1435) may be formed at the exposed surface of the dielectric buffer(e.g., the buffer 1430 at D1 layer 1415-a). The conformal liner (e.g.,liner 1435) may comprise any material configured to protect the exposedsurface of the dielectric buffer (e.g., the buffer 1430 at D1 layer1415-a) to prevent subsequent etch steps from removing the dielectricbuffer (e.g., the buffer 1430 at D1 layer 1415-a). In some cases,formation of a conformal liner may be omitted if selectivity associatedwith subsequent etch steps may be sufficient to preserve (substantiallypreserve) the dielectric buffer (e.g., the buffer 1430 at D1 layer1415-a).

At processing step 1485, an etch step may remove an additional portionof the conductive material from the via hole to expose anotherdielectric buffer (e.g., buffer 1432 at D1 layer 1415-b) interposedbetween the via hole and the target electrode (e.g., target electrode1416-c). Subsequently, an etch step (e.g., an isotropic etch step) mayremove (e.g., through chemical selectivity) the dielectric buffer 1432to expose the target electrode (e.g., the target electrode 1416-c). Theremoval of the dielectric buffer 1432 that exposes the target electrode(e.g., target electrode 1416-c) may simultaneously expose a secondtarget electrode (e.g., target electrode 1416-d) within the targetelectrode layer (e.g., D1 layer 1415-b).

At processing step 1490, a conductive material may fill the spacecreated in the via hole at processing step 1485, thereby coupling thetarget electrode 1416-c (and the second target electrode 1416-d) withthe conductive element 1405 through the conductive plug (e.g., plug1421-d). At the completion of processing step 1490, the conductive plug1421-d (e.g., via hole filled with a conductive material) may have afirst width (e.g., diameter 1422-d) at a memory layer (e.g., memorylayer 1420) and a second width (e.g., diameter 1423-c) at the targetelectrode layer (e.g., D1 layer 1415-b). The second width (e.g.,diameter 1423-c) may be larger than the first width (e.g., diameter1422-d). Further, the conformal liner 1435 may be interposed between theconductive plug 1421-d (e.g., via hole filled with a conductivematerial) and a dielectric material (e.g., the dielectric buffer 1430 atD1 layer 1415-a) at the completion of processing step 1490. Thus, theconductive plug 1421-d may have a third width (e.g., diameter 1423-d) atanother electrode layer (e.g., D1 layer 1415-a). In some cases, thethird with (e.g., diameter 1423-d) may be less than the first width(e.g., 1422-d).

In some cases, at the completion of processing step 1490, a targetelectrode (e.g., the electrode of a word line of a lower deck of memoryarray) may be connected to a node of a circuit component (e.g., a rowdecoder 120) by the conductive plug (e.g., plug 1421-d) such that amemory controller (e.g., memory controller 140) may activate the targetelectrode (e.g., a word line 910-c) of the lower deck of memory cells(e.g., lower deck 945-b).

In some cases, an apparatus that includes a socket region of a 3Dcross-point memory array (e.g., a socket region that may be built usingthe fabrication techniques described with reference to FIGS. 13 and 14)may include a stack that includes an electrode layer and a memory layer,a conductive element in contact with the stack, a conductive plug thatextends through the stack and is coupled with the conductive element,the conductive plug having a first width at the memory layer and asecond width at the electrode layer, the second width larger than thefirst width, and a first electrode at the electrode layer, the firstelectrode coupled with the conductive plug.

In some cases, the apparatus described above may further include asecond electrode at the electrode layer, the second electrode coupledwith the conductive plug. In some examples of the apparatus describedabove, the second electrode is isolated from a collinear electrode atthe electrode layer. In some examples of the apparatus described above,the first electrode is parallel to the second electrode.

In some cases, the apparatus described above may further include aconformal liner at a second electrode layer within the stack, theconformal liner interposed between the conductive plug and a dielectricmaterial. In some examples of the apparatus described above, thedielectric material is interposed between the conformal liner and athird electrode at the second electrode layer.

FIG. 15 shows a flowchart illustrating a method 1500 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 1500 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 8.

At block 1505 a plurality of vias may be formed through a top layer of astack that comprises a first dielectric material at a first layer. Theoperations of block 1505 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1505 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 8.

At block 1510 a first channel in the first dielectric material may beformed, the first channel aligned with the plurality of vias. Theoperations of block 1510 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1510 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 8.

At block 1515 the first channel may be filled with an electrodematerial. The operations of block 1515 may be performed according to themethods described herein. In certain examples, aspects of the operationsof block 1515 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 8.

At block 1520 a second channel may be formed in the electrode materialwithin the first channel, the second channel that is narrower than thefirst channel. The operations of block 1520 may be performed accordingto the methods described herein. In certain examples, aspects of theoperations of block 1520 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 8.

At block 1525 the second channel may be filled with the first dielectricmaterial. The operations of block 1525 may be performed according to themethods described herein. In certain examples, aspects of the operationsof block 1525 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 8.

In some cases, the method 1500 may also include forming a conformalliner within the first channel, the conformal liner interposed betweenthe first dielectric material and the electrode material. In some cases,the method 1500 may also include forming a plurality of second viasthrough the top layer of the stack, wherein the plurality of second viasform a second row of vias that intersects a first row of vias formed bythe plurality of vias, and wherein the stack comprises a seconddielectric material at a second layer. Some examples of the method 1500described above may further include forming a third channel in thesecond dielectric material that may be aligned with the plurality ofsecond vias. Some examples of the method 1500 described above mayfurther include filling the third channel with the electrode material.Some examples of the method 1500 described above may further includeforming, in the electrode material within the third channel, a fourthchannel that may be narrower than the third channel. Some examples ofthe method 1500 described above may further include filling the fourthchannel with the second dielectric material.

In some examples of the method 1500 described above, forming the firstchannel comprises forming a plurality of first cavities in the firstdielectric material. In some examples of the method 1500 describedabove, forming the plurality of first cavities comprises removing,through the plurality of vias, a portion of the first dielectricmaterial from the first layer. In some examples of the method 1500described above, removing the portion of the first dielectric materialcomprises applying an isotropic etchant that may be chemically selectivebetween the first dielectric material and at least one other material inthe stack. In some examples of the method 1500 described above, formingthe second channel comprises forming a plurality of second cavities inthe electrode material within the first channel.

In some examples of the method 1500 described above, forming theplurality of second cavities comprises removing, through the pluralityof vias, a portion of the electrode material from the first channel. Insome examples of the method 1500 described above, removing the portionof the electrode material comprises applying an isotropic etchant thatmay be chemically selective between the electrode material and at leastone other material in the stack. In some examples of the method 1500described above, the stack further comprises a second layer comprising asecond dielectric material and a third layer between the first layer andthe second layer, the third layer comprising a chalcogenide material. Insome examples of the method described above, filling the second channelwith the first dielectric material creates a loop of electrode materialat the first layer.

FIG. 16 shows a flowchart illustrating a method 1600 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 1600 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 7, 13, and 14.

At block 1605 a via hole may be formed that extends through a stack to aconductive element, the stack comprising a target electrode. Theoperations of block 1605 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1605 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7, 13, and 14.

At block 1610 the via hole may be filled with a conductive material. Theoperations of block 1610 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1610 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7, 13, and 14.

At block 1615 a portion of the conductive material from the via hole maybe removed to expose a dielectric buffer interposed between the via holeand the target electrode. The operations of block 1615 may be performedaccording to the methods described herein. In certain examples, aspectsof the operations of block 1615 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 7, 13, and 14.

At block 1620 the dielectric buffer may be removed to expose the targetelectrode. The operations of block 1620 may be performed according tothe methods described herein. In certain examples, aspects of theoperations of block 1620 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 7, 13, and 14.

At block 1625 the via hole may be filled with the conductive material tocouple the target electrode with the conductive element. The operationsof block 1625 may be performed according to the methods describedherein. In certain examples, aspects of the operations of block 1625 maybe performed as part of one or more processes as described withreference to FIGS. 3 through 7, 13, and 14.

In some cases, the method 1600 may also include forming a conformalliner at a different electrode layer within the stack. In some cases,the method 1600 may also include forming a gap in the target electrode.

In some examples of the method 1600 described above, removing thedielectric buffer to expose the target electrode simultaneously exposesa second target electrode within a target electrode layer that includesthe target electrode, the second target electrode being on an oppositeside of the via hole relative to the target electrode. In some examplesof the method 1600 described above, filling the via hole with theconductive material to couple the target electrode with the conductiveelement further comprises coupling the target electrode with the secondtarget electrode. In some examples of the method 1600 described above,forming the gap in the target electrode comprises anisotropicallyetching through the target electrode. In some examples of the method1600 described above, forming the gap in the target electrode comprisesforming a second via hole that extends through the stack to at least atarget layer that includes the target electrode, and isotropicallyremoving, through the second via hole, a portion of the targetelectrode.

FIG. 17 shows a flowchart illustrating a method 1700 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 1700 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 7 and 9.

At block 1705 a stack may be formed that comprises a memory material ata memory layer. The operations of block 1705 may be performed accordingto the methods described herein. In certain examples, aspects of theoperations of block 1705 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 7 and 9.

At block 1710 a plurality of via holes may be formed through the stack.The operations of block 1710 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1710 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 9.

At block 1715 a sheet of the memory material perforated by a pluralityof dielectric plugs may be formed by filling the plurality of via holeswith a dielectric material. The operations of block 1715 may beperformed according to the methods described herein. In certainexamples, aspects of the operations of block 1715 may be performed aspart of one or more processes as described with reference to FIGS. 3through 7 and 9.

In some cases, the method 1700 may also include forming a plurality ofsecond via holes through the stack, and filling the plurality of secondvia holes with a second dielectric material to form additionaldielectric plugs in the sheet of memory material. In some cases, themethod 1700 may also include forming a first channel in the dielectricmaterial at a first layer of the stack, the first channel aligned withthe plurality of via holes, forming, in the electrode material withinthe first channel, a second channel that may be narrower than the firstchannel, and filling the second channel with the dielectric material. Insome cases, the method 1700 may also include forming a plurality ofsecond via holes through the stack, wherein the plurality of second viaholes form a second row of via holes in a second direction thatintersects a first direction corresponding to a first row of via holesformed by the plurality of via holes, and wherein the stack comprises asecond dielectric material at a second layer, forming a third channel inthe second dielectric material, the third channel aligned with theplurality of second via holes, filling the third channel with theelectrode material, forming, in the electrode material within the thirdchannel, a fourth channel that may be narrower than the third channel,and filling the fourth channel with the second dielectric material.

In some examples of the method 1700 described above, the plurality ofvia holes may be disposed in a first linear configuration having a firstdirection. In some examples of the method 1700 described above, theplurality of second via holes may be disposed in a second linearconfiguration having a second direction that intersects the firstdirection. In some examples of the method 1700 described above, thesecond direction may be orthogonal to the first direction. In someexamples of the method 1700 described above, the sheet of the memorymaterial comprises rows of dielectric plugs. In some examples of themethod 1700 described above, a dielectric plug may be common to the rowsof dielectric plugs.

In some examples of the method 1700 described above, forming the firstchannel comprises forming a plurality of first cavities in thedielectric material, wherein contiguous first cavities of the pluralityof first cavities merge to form the first channel. In some examples ofthe method 1700 described above, forming the plurality of first cavitiescomprises removing, through the plurality of via holes, a portion of thedielectric material from the first layer. In some examples of the method1700 described above, the memory material comprises a chalcogenidematerial.

FIG. 18 shows a flowchart illustrating a method 1800 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 1800 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 7 and 10.

At block 1805 pluralities of first vias may be formed through a toplayer of a stack that comprises a memory material at a memory layer,each plurality of first vias linearly disposed in a first direction. Theoperations of block 1805 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1805 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 10.

At block 1810 pluralities of second vias may be formed through the toplayer of the stack, each plurality of second vias linearly disposed in asecond direction that is different from the first direction. Theoperations of block 1810 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1810 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 10.

At block 1815 a plurality of first channels may be formed in the memorymaterial, each first channel aligned with a plurality of first vias. Theoperations of block 1815 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1815 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 10.

At block 1820 a plurality of second channels may be formed in the memorymaterial, each second channel intersecting the plurality of firstchannels. The operations of block 1820 may be performed according to themethods described herein. In certain examples, aspects of the operationsof block 1820 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 10.

At block 1825 the plurality of first channels and the plurality ofsecond channels may be filled with a dielectric material. The operationsof block 1825 may be performed according to the methods describedherein. In certain examples, aspects of the operations of block 1825 maybe performed as part of one or more processes as described withreference to FIGS. 3 through 7 and 10.

In some examples of the method 1800 described above, forming theplurality of second channels forms a plurality of memory materialelements at the memory layer, each memory material element coupled withat least four electrodes. In some examples of the method 1800 describedabove, forming the plurality of first channels comprises forming aplurality of first cavities in the memory material, each first cavitycorresponding to a first via, wherein contiguous first cavitiescorresponding to a plurality of first vias form a first channel.

FIG. 19 shows a flowchart illustrating a method 1900 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 1900 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 7 and 11.

At block 1905 a plurality of first vias may be formed through a toplayer of a stack that comprises a placeholder material at a placeholderlayer. The operations of block 1905 may be performed according to themethods described herein. In certain examples, aspects of the operationsof block 1905 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 11.

At block 1910 a first channel may be formed in the placeholder material,the first channel aligned with the plurality of first vias. Theoperations of block 1910 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1910 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 11.

At block 1915 the first channel may be filled with a memory material.The operations of block 1915 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 1915 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 11.

At block 1920 a second channel may be formed in the memory materialwithin the first channel, the second channel that is narrower than thefirst channel. The operations of block 1920 may be performed accordingto the methods described herein. In certain examples, aspects of theoperations of block 1920 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 7 and 11.

At block 1925 the second channel may be filled with a dielectricmaterial. The operations of block 1925 may be performed according to themethods described herein. In certain examples, aspects of the operationsof block 1925 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 11.

In some cases, the method 1900 may also include forming a third channelat the placeholder layer, wherein the third channel extends in adifferent direction than the first channel and separates the memorymaterial within the first channel into a plurality of memory materialelements.

In some examples of the method 1900 described above, forming the firstchannel comprises forming a plurality of first cavities in theplaceholder material, wherein contiguous first cavities merge to formthe first channel. In some examples of the method 1900 described above,forming the plurality of first cavities comprises removing, through theplurality of first vias, a portion of the placeholder material from theplaceholder layer. In some examples of the method 1900 described above,forming the second channel comprises removing, through the plurality offirst vias, a portion of the memory material from the first channel. Insome examples of the method 1900 described above, filling the secondchannel with the dielectric material creates a band of memory materialthat surrounds the dielectric material in the second channel.

In some examples of the method 1900 described above, forming the thirdchannel comprises forming a plurality of second vias through the toplayer of the stack, wherein the plurality of second vias form a secondrow of vias that intersects a first row of vias formed by the pluralityof first vias. In some examples of the method 1900 described above, eachmemory material element of the plurality of memory material elements maybe coupled with at least three electrodes. In some examples of themethod 1900 described above, the memory material comprises achalcogenide material.

FIG. 20 shows a flowchart illustrating a method 2000 for a cross-pointmemory array and related fabrication techniques in accordance withembodiments of the present disclosure. The operations of method 2000 maybe implemented by the method described herein, for example withreference to FIGS. 3 through 7 and 12.

At block 2005 a via may be formed through a top layer of a stack thatcomprises a placeholder layer. The operations of block 2005 may beperformed according to the methods described herein. In certainexamples, aspects of the operations of block 2005 may be performed aspart of one or more processes as described with reference to FIGS. 3through 7 and 12.

At block 2010 a cavity within the placeholder layer may be formedthrough the via. The operations of block 2010 may be performed accordingto the methods described herein. In certain examples, aspects of theoperations of block 2010 may be performed as part of one or moreprocesses as described with reference to FIGS. 3 through 7 and 12.

At block 2015 the cavity may be filled with a memory material. Theoperations of block 2015 may be performed according to the methodsdescribed herein. In certain examples, aspects of the operations ofblock 2015 may be performed as part of one or more processes asdescribed with reference to FIGS. 3 through 7 and 12.

At block 2020 a first channel in the memory material may be formed, thefirst channel separating the memory material into discrete elements atthe placeholder layer along a first axis. The operations of block 2020may be performed according to the methods described herein. In certainexamples, aspects of the operations of block 2020 may be performed aspart of one or more processes as described with reference to FIGS. 3through 7 and 12.

In some cases, the method 2000 may also include removing a portion ofthe memory material through the via, prior to forming the first channel,to form a ring of memory material at the placeholder layer, the ring ofmemory material surrounding a vertical axis of the via (e.g., anorthogonal direction with respect to a substrate). In some cases, themethod 2000 may also include forming a second channel in the memorymaterial, the second channel separating the memory material intoadditional discrete elements at the placeholder layer along a secondaxis different from the first axis.

In some examples of the method 2000 described above, forming the firstchannel comprises removing, through a plurality of vias that includesthe via, a portion of the memory material from the placeholder layer. Insome examples of the method 2000 described above, forming the secondchannel creates four memory material elements, each memory materialelement having a curved surface. In some examples of the method 2000described above, the memory material comprises a chalcogenide material.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The term “electronic communication” and “coupled” refer to arelationship between components that support electron flow between thecomponents. This may include a direct connection between components ormay include intermediate components. Components in electroniccommunication or coupled to one another may be actively exchangingelectrons or signals (e.g., in an energized circuit) or may not beactively exchanging electrons or signals (e.g., in a de-energizedcircuit) but may be configured and operable to exchange electrons orsignals upon a circuit being energized. By way of example, twocomponents physically connected via a switch (e.g., a transistor) are inelectronic communication or may be coupled regardless of the state ofthe switch (i.e., open or closed).

As used herein, the term “substantially” means that the modifiedcharacteristic (e.g., a verb or adjective modified by the termsubstantially) need not be absolute but is close enough so as to achievethe advantages of the characteristic.

As used herein, the term “electrode” may refer to an electricalconductor, and in some cases, may be employed as an electrical contactto a memory cell or other component of a memory array. An electrode mayinclude a trace, wire, conductive line, conductive layer, or the likethat provides a conductive path between elements or components of memorydevice 100.

Chalcogenide materials may be materials or alloys that include at leastone of the elements S, Se, and Te. Chalcogenide materials may includealloys of S, Se, Te, Ge, As, Al, Si, Sb, Au, indium (In), gallium (Ga),tin (Sn), bismuth (Bi), palladium (Pd), cobalt (Co), oxygen (O), silver(Ag), nickel (Ni), platinum (Pt). Example chalcogenide materials andalloys may include, but are not limited to, Ge—Te, In—Se, Sb—Te, Ga—Sb,In—Sb, As—Te, Al—Te, Ge—Sb—Te, Te—Ge—As, In—Sb—Te, Te—Sn—Se, Ge—Se—Ga,Bi—Se—Sb, Ga—Se—Te, Sn—Sb—Te, In—Sb—Ge, Te—Ge—Sb—S, Te—Ge—Sn—O,Te—Ge—Sn—Au, Pd—Te—Ge—Sn, In—Se—Ti—Co, Ge—Sb—Te—Pd, Ge—Sb—Te—Co,Sb—Te—Bi—Se, Ag—In—Sb—Te, Ge—Sb—Se—Te, Ge—Sn—Sb—Te, Ge—Te—Sn—Ni,Ge—Te—Sn—Pd, or Ge—Te—Sn—Pt. The hyphenated chemical compositionnotation, as used herein, indicates the elements included in aparticular compound or alloy and is intended to represent allstoichiometries involving the indicated elements. For example, Ge—Te mayinclude Ge_(x)Te_(y), where x and y may be any positive integer. Otherexamples of variable resistance materials may include binary metal oxidematerials or mixed valence oxide including two or more metals, e.g.,transition metals, alkaline earth metals, and/or rare earth metals.Embodiments are not limited to a particular variable resistance materialor materials associated with the memory components of the memory cells.For example, other examples of variable resistance materials can be usedto form memory components and may include chalcogenide materials,colossal magnetoresistive materials, or polymer-based materials, amongothers.

The term “isolated” refers to a relationship between components in whichelectrons are not presently capable of flowing between them; componentsare isolated from each other if there is an open circuit between them.For example, two components physically connected by a switch may beisolated from each other when the switch is open.

The devices discussed herein, including a memory device 100, may beformed on a semiconductor substrate, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

A transistor or transistors discussed herein may represent afield-effect transistor (FET) and comprise a three terminal deviceincluding a source, drain, and gate. The terminals may be connected toother electronic elements through conductive materials, e.g., metals.The source and drain may be conductive and may comprise a heavily-doped,e.g., degenerate, semiconductor region. The source and drain may beseparated by a lightly-doped semiconductor region or channel. If thechannel is n-type (i.e., majority carriers are electrons), then the FETmay be referred to as a n-type FET. If the channel is p-type (i.e.,majority carriers are holes), then the FET may be referred to as ap-type FET. The channel may be capped by an insulating gate oxide. Thechannel conductivity may be controlled by applying a voltage to thegate. For example, applying a positive voltage or negative voltage to ann-type FET or a p-type FET, respectively, may result in the channelbecoming conductive. A transistor may be “on” or “activated” when avoltage greater than or equal to the transistor's threshold voltage isapplied to the transistor gate. The transistor may be “off” or“deactivated” when a voltage less than the transistor's thresholdvoltage is applied to the transistor gate.

The description set forth herein, in connection with the appendeddrawings, describes example configurations and does not represent allthe examples that may be implemented or that are within the scope of theclaims. The term “exemplary” used herein means “serving as an example,instance, or illustration,” and not “preferred” or “advantageous overother examples.” The detailed description includes specific details forthe purpose of providing an understanding of the described techniques.These techniques, however, may be practiced without these specificdetails. In some instances, well-known structures and devices are shownin block diagram form in order to avoid obscuring the concepts of thedescribed examples.

In the appended figures, similar components or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If just the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof.

The various illustrative blocks and modules described in connection withthe disclosure herein may be implemented or performed with ageneral-purpose processor, a DSP, an ASIC, an FPGA or other programmablelogic device, discrete gate or transistor logic, discrete hardwarecomponents, or any combination thereof designed to perform the functionsdescribed herein. A general-purpose processor may be a microprocessor,but in the alternative, the processor may be any conventional processor,controller, microcontroller, or state machine. A processor may also beimplemented as a combination of computing devices (e.g., a combinationof a digital signal processor (DSP) and a microprocessor, multiplemicroprocessors, one or more microprocessors in conjunction with a DSPcore, or any other such configuration).

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described above can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations. Also, as used herein, including in the claims, “or” as usedin a list of items (for example, a list of items prefaced by a phrasesuch as “at least one of” or “one or more of”) indicates an inclusivelist such that, for example, a list of at least one of A, B, or C meansA or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, asused herein, the phrase “based on” shall not be construed as a referenceto a closed set of conditions. For example, an exemplary step that isdescribed as “based on condition A” may be based on both a condition Aand a condition B without departing from the scope of the presentdisclosure. In other words, as used herein, the phrase “based on” shallbe construed in the same manner as the phrase “based at least in parton.”

Computer-readable media includes both non-transitory computer storagemedia and communication media including any medium that facilitatestransfer of a computer program from one place to another. Anon-transitory storage medium may be any available medium that can beaccessed by a general purpose or special purpose computer. By way ofexample, and not limitation, non-transitory computer-readable media cancomprise RAM, ROM, electrically erasable programmable read only memory(EEPROM), compact disk (CD) ROM or other optical disk storage, magneticdisk storage or other magnetic storage devices, or any othernon-transitory medium that can be used to carry or store desired programcode means in the form of instructions or data structures and that canbe accessed by a general-purpose or special-purpose computer, or ageneral-purpose or special-purpose processor. Also, any connection isproperly termed a computer-readable medium. For example, if the softwareis transmitted from a website, server, or other remote source using acoaxial cable, fiber optic cable, twisted pair, digital subscriber line(DSL), or wireless technologies such as infrared, radio, and microwave,then the coaxial cable, fiber optic cable, twisted pair, digitalsubscriber line (DSL), or wireless technologies such as infrared, radio,and microwave are included in the definition of medium. Disk and disc,as used herein, include CD, laser disc, optical disc, digital versatiledisc (DVD), floppy disk and Blu-ray disc where disks usually reproducedata magnetically, while discs reproduce data optically with lasers.Combinations of the above are also included within the scope ofcomputer-readable media.

The description herein is provided to enable a person skilled in the artto make or use the disclosure. Various modifications to the disclosurewill be readily apparent to those skilled in the art, and the genericprinciples defined herein may be applied to other variations withoutdeparting from the scope of the disclosure. Thus, the disclosure is notlimited to the examples and designs described herein, but is to beaccorded the broadest scope consistent with the principles and novelfeatures disclosed herein.

What is claimed is:
 1. A method, comprising: forming a via through a toplayer of a stack that comprises a placeholder layer; forming, using thevia, a via hole that extends through the stack in a first direction;forming, using the via and the via hole, a cavity within the placeholderlayer; filling the cavity with a memory material to form a disc ofmemory material at the placeholder layer; removing, after filling thecavity with the memory material to form the disc of memory material, afirst portion of the disc of memory material through the via to form aring of memory material at the placeholder layer, the ring of memorymaterial surrounding a vertical axis of the via that extends in thefirst direction; and forming a first channel in the disc of memorymaterial at the placeholder layer by removing a second portion of thememory material, the first channel extending in a second directiondifferent from the first direction and separating the disc of memorymaterial into two discrete elements.
 2. The method of claim 1, whereinforming the first channel comprises: removing, through a plurality ofvias that includes the via, the second portion of the memory materialfrom the placeholder layer.
 3. The method of claim 1, furthercomprising: forming a second channel in the memory material, the secondchannel extending in a third direction and separating each of the twodiscrete elements to form four discrete elements.
 4. The method of claim3, wherein each of the four discrete elements has a curved surface. 5.The method of claim 1, wherein the memory material comprises achalcogenide material.
 6. A method, comprising: forming a row of vias ina top layer of a stack that comprises a placeholder material at aplaceholder layer; forming, using the row of vias, a plurality of firstvia holes that each extend through the stack in a vertical direction;removing, using the row of vias and the first via holes, a portion ofthe placeholder material to form a first channel in the placeholdermaterial, the first channel extending in a horizontal direction andconnecting at least three of the first via holes; filling the firstchannel with a memory material; forming, using the row of vias, aplurality of second via holes that each extend through the stack in thevertical direction; removing, using the row of vias and the second viaholes, a portion of the memory material to form a second channel in thememory material within the first channel, the second channel extendingin the horizontal direction and narrower than the first channel; andfilling the second channel with a dielectric material.
 7. The method ofclaim 6, wherein forming the first channel comprises: forming aplurality of first cavities in the placeholder material, whereincontiguous first cavities merge to form the first channel.
 8. The methodof claim 7, wherein forming the plurality of first cavities comprises:removing, through the row of vias, a portion of the placeholder materialfrom the placeholder layer.
 9. The method of claim 6, wherein formingthe second channel comprises: removing, through the row of vias, aportion of the memory material from the first channel.
 10. The method ofclaim 6, wherein filling the second channel with the dielectric materialcreates a band of memory material that surrounds the dielectricmaterial.
 11. The method of claim 6, further comprising: forming a thirdchannel at the placeholder layer, wherein the third channel extends in asecond horizontal direction and separates the memory material within thefirst channel into a plurality of memory material elements.
 12. Themethod of claim 11, wherein forming the third channel comprises: forminga row of second vias through the top layer of the stack, wherein the rowof second vias intersects the row of vias.
 13. The method of claim 11,wherein each memory material element of the plurality of memory materialelements is coupled with at least three electrodes.
 14. The method ofclaim 6, wherein the memory material comprises a chalcogenide material.